75 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEM

75-W, 6.0-GHz, GaN HEMT Die

Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater pow ·Up to 6-GHz operation;

19 dB Typical Small Signal Gain at 4 GHz

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75 W; 6.0 GHz; GaN HEMT Die

The CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated-electron-drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power densi ·65% Typical Power Added Efficiency at 4 GHz\n·60% Typical Power Added Efficiency at 6 GHz\n·75 W Typical PSAT\n·50 V Operation\n·High Breakdown Voltage\n·Up to 6 GHz Operation;