Description

Wolfspeed’s CGHV60075D5 is a gallium nitride (GaN)

High Electron Mobility Transistor (HEMT). GaN has

superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher

saturated electron drift velocity, and higher thermal

conductivity. GaN HEMTs offer greater power density and

wider bandwidths compared to Si and GaAs transistors

Features

• 19 dB Typical Small Signal Gain at 4 GHz

• 17 dB Typical Small Signal Gain at 6 GHz

• 65 Typical Power Added Efficiency at 4 GHz

• 60 Typical Power Added Efficiency at 6 GHz

• 75 W Typical PSAT

• 50 V Operation

• High Breakdown Voltage

• Up to 6 GHz Operation

• Bare die are shipped in Gel-Pak® containers

• Non-adhesive tacky membrane immobilizes die during shipment

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms