40 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

40 W, 6.0 GHz, GaN HEMT Die

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40-W, 6.0-GHz, GaN HEMT Die

封装/外壳：模具 包装：托盘 描述：RF MOSFET HEMT 50V DIE 分立半导体产品 晶体管 - FET，MOSFET - 射频

SCHOTTKY POWERMOD

Schottky PowerMod • Schottky Barrier Rectifier • Guard Ring Protection • 600 Amperes/35 to 45 Volts • 175°C Junction Temperature • Reverse Energy Tested • ROHS Compliant

SCHOTTKY POWERMOD

Schottky PowerMod • Schottky Barrier Rectifier • Guard Ring Protection • 600 Amperes/35 to 45 Volts • 175°C Junction Temperature • Reverse Energy Tested • ROHS Compliant

SCHOTTKY POWERMOD

Schottky PowerMod • Schottky Barrier Rectifier • Guard Ring Protection • 600 Amperes/35 to 45 Volts • 175°C Junction Temperature • Reverse Energy Tested • ROHS Compliant

4-KEY CHARGE-TRANSFER IC

文件：295.6 Kbytes Page：10 Pages

4-KEY CHARGE-TRANSFER IC

文件：295.6 Kbytes Page：10 Pages