150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

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150-W; 2900 – 3500-MHz; 50-V; GaN HEMT for S-Band Radar Systems

Rated Power = 150 W @ TCASE = 85°COperating Frequency = 2.9 – 3.5 GHzTransient 100 μsec – 300 μsec @ 20% Duty Cycle13.5 dB Power Gain @ TCASE = 85°C50 % Typical Drain Efficiency @ TCASE = 85°CInput Matched<0.3 dB Pulsed Amplitude Droop • Rated Power = 150 W @ TCASE = 85°C \n•Operating Frequency = 2.9 – 3.5 GHz \n•Transient 100 μsec – 300 μsec @ 20% Duty Cycle \n•13.5 dB Power Gain @ TCASE = 85°C \n•50 % Typical Drain Efficiency @ TCASE = 85°C \n•Input Matched \n•<0.3 dB Pulsed Amplitude Droop;

包装：盒 描述：CGHV35150F DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes Page：10 Pages

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes Page：10 Pages

RADIAL LEADED INDUCTORS

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