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CGHV35150价格

参考价格:¥2533.8096

型号:CGHV35150F 品牌:Cree 备注:这里有CGHV35150多少钱,2026年最近7天走势,今日出价,今日竞价,CGHV35150批发/采购报价,CGHV35150行情走势销售排行榜,CGHV35150报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CGHV35150

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is

WOLFSPEED

CGHV35150

150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems

The CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)  designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/met ·Rated Power = 150 W @ TCASE = 85°C\n·Operating Frequency = 2.9 – 3.5 GHz\n·Transient 100 μsec – 300 μsec @ 20% Duty Cycle\n·13.5 dB Power Gain @ TCASE = 85°C\n·50 % Typical Drain Efficiency @ TCASE = 85°C\n·Input Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

CGHV35150

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件:853.99 Kbytes Page:10 Pages

CREE

科锐

150-W; 2900 – 3500-MHz; 50-V; GaN HEMT for S-Band Radar Systems

Rated Power = 150 W @ TCASE = 85°COperating Frequency = 2.9 – 3.5 GHzTransient 100 μsec – 300 μsec @ 20% Duty Cycle13.5 dB Power Gain @ TCASE = 85°C50 % Typical Drain Efficiency @ TCASE = 85°CInput Matched<0.3 dB Pulsed Amplitude Droop • Rated Power = 150 W @ TCASE = 85°C \n•Operating Frequency = 2.9 – 3.5 GHz \n•Transient 100 μsec – 300 μsec @ 20% Duty Cycle \n•13.5 dB Power Gain @ TCASE = 85°C \n•50 % Typical Drain Efficiency @ TCASE = 85°C \n•Input Matched \n•<0.3 dB Pulsed Amplitude Droop;

MACOM

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件:853.99 Kbytes Page:10 Pages

CREE

科锐

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件:853.99 Kbytes Page:10 Pages

CREE

科锐

包装:盒 描述:CGHV35150F DEV BOARD WITH HEMT 开发板,套件,编程器 射频评估和开发套件,开发板

WOLFSPEED

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件:853.99 Kbytes Page:10 Pages

CREE

科锐

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件:853.99 Kbytes Page:10 Pages

CREE

科锐

包装:散装 描述:TEST FIXTURE FOR CGHV35150F 开发板,套件,编程器 射频评估和开发套件,开发板

WOLFSPEED

RADIAL LEADED INDUCTORS

文件:670.06 Kbytes Page:8 Pages

ABCO

CGHV35150产品属性

  • 类型

    描述

  • Min Frequency(MHz):

    2900

  • Max Frequency(MHz):

    3500

  • Peak Output Power(W):

    150

  • Gain(dB):

    13.5

  • Efficiency(%):

    50

  • Operating Voltage(V):

    50

  • Form:

    Packaged Discrete Transistor

  • Package Category:

    Flange

  • Technology:

    GaN-on-SiC

更新时间:2026-7-22 19:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Cree/Wolfspeed
22+
9000
原厂渠道,现货配单
CREE
26+
BGA
21530
专业军工优势原装现货价格优惠 假一赔百
CORNELLDUBILIER-CDE
25+
Bulk
880000
明嘉莱只做原装正品现货
CREE
25+
N/A
90000
进口原装现货假一罚十价格合理
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
CREE
18+
SMD
85600
保证进口原装可开17%增值税发票
CREE/科锐
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CREE
23+
CDIP
1896
公司优势库存热卖全新原装!欢迎来电
MACOM
最新
N/A
15860
全新原装新到现货假一罚十特价
Cree/Wolfspeed
26+
原包装原封□□
60
正纳电子进口元件供应链优势渠道现货部分短货期QQ详

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