位置：首页 > IC中文资料 > CGHV35120F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CGHV35120F | 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description Wolfspeed’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor i | WOLFSPEED |   | |
CGHV35120F | 120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems | MACOM | | |
Silicon Power Rectifier Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Construction ● Glass Passivated Die ● Excellent Reliability ● VRRM to 1600V ● 1050 Amps Surge Rating | Microsemi 美高森美 | | ||
Low Profile Designed for PCB Connections 文件：171.1 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
RADIAL LEADED INDUCTORS 文件：670.06 Kbytes Page：8 Pages | ABCO | | ||
RADIAL LEADED INDUCTORS 文件：670.06 Kbytes Page：8 Pages | ABCO | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
三年内 |
1983 |
只做原装正品 |
||||
CREE/科锐 |
23+ |
1000000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
CREE |
638 |
原装正品 |
|||||
CREE/科锐 |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
CREE |
22+ |
N/A |
9000 |
只做原装假一罚十 |
|||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
||||
CREE |
24+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
|||
Cree/Wolfspeed |
23+ |
9000 |
原装正品，支持实单 |
||||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
CGHV35120F芯片相关品牌
CGHV35120F规格书下载地址
CGHV35120F参数引脚图相关
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CGHV35120F数据表相关新闻
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DdatasheetPDF页码索引
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