120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor i

120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems

The CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CGHV35120F ideal for 2.9 - 3.8 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange ·Rated Power = 120 W @ TCASE = 85°C\n·Operating Frequency = 2.9 – 3.8 GHz\n·Rated Power = 120 W @ TCASE = 85°C\n·Rated Power = 120 W @ TCASE = 85°C\n·Rated Power = 120 W @ TCASE = 85°C\n·Input Matched\n·<0.3 dB Pulsed Amplitude Droop;

Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Construction ● Glass Passivated Die ● Excellent Reliability ● VRRM to 1600V ● 1050 Amps Surge Rating

Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Construction ● Glass Passivated Die ● Excellent Reliability ● VRRM to 1600V ● 1050 Amps Surge Rating

Low Profile Designed for PCB Connections

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RADIAL LEADED INDUCTORS

文件：670.06 Kbytes Page：8 Pages

RADIAL LEADED INDUCTORS

文件：670.06 Kbytes Page：8 Pages