Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Construction ● Glass Passivated Die ● Excellent Reliability ● VRRM to 1600V ● 1050 Amps Surge Rating

Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Seal Construction ● Glass Passivated Die ● VRRM to 1600V ● 1050 Amps Surge Rating

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode and Rectifier Devices

120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor i

Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Construction ● Glass Passivated Die ● Excellent Reliability ● VRRM to 1600V ● 1050 Amps Surge Rating

Low Profile Designed for PCB Connections

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RADIAL LEADED INDUCTORS

文件：670.06 Kbytes Page：8 Pages

RADIAL LEADED INDUCTORS

文件：670.06 Kbytes Page：8 Pages