| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2.0A SUPER-FAST GLASS BODY RECTIFIER Features • Hermetically Sealed Glass Body Construction • Controlled Avalanche Characteristics • Super-Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 50A Peak • Low Reverse Leakage Current | DIODES 美台半导体 |   | ||
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. | NEC 瑞萨 | | ||
SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR) 文件：366.58 Kbytes Page：29 Pages | TI 德州仪器 | | ||
SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR) 文件：366.58 Kbytes Page：29 Pages | TI 德州仪器 | | ||
120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver 文件：927.34 Kbytes Page：31 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
23+24 |
SOD-57 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
VISHAY |
20+ |
DO-15 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
PHI |
26+ |
DIP |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
PHI |
23+ |
DIP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
24+ |
DIP |
20000 |
一级代理原装现货假一罚十 |
|||
VISHAY/威世 |
2023+ |
DO-15 |
2928 |
原厂全新正品旗舰店优势现货 |
|||
PHI |
23+ |
DO-57 |
20232 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
PHI |
2447 |
SOD57 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VIS |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
|||
PHI |
23+ |
SOD-57 |
50000 |
全新原装正品现货,支持订货 |
CGHV27200F/P芯片相关品牌
CGHV27200F/P规格书下载地址
CGHV27200F/P参数引脚图相关
- d402
- d325
- d2007
- d2004
- d2002
- d126
- d1004
- d1002
- c波段
- cw7805
- cs5532
- cs1
- cpld
- cp10
- connector
- cob
- cmos传感器
- cmos
- cm2006
- cicret
- CGP30
- CGP2K
- CGP20
- CGP1K
- CGP15
- CGP1.5K
- CGOV5S3
- CGOV3S3
- CGOF5S3
- CGOF3S3
- CGO869
- CG-NPT
- CGM-22
- CGM-14
- CGL-B
- CGL600W
- CGL3K
- CGL300W
- CGL2K
- CGL1.5K
- CGHV38375F
- CGHV37400F
- CGHV35400F-TB
- CGHV35400F-AMP
- CGHV35400F1
- CGHV35400F
- CGHV35150-TB
- CGHV35150P
- CGHV35150F-AMP
- CGHV35150F
- CGHV35150
- CGHV35120F
- CGHV3510F
- CGHV35060MP
- CGHV31500F-TB
- CGHV31500F-AMP
- CGHV31500F1-AMP
- CGHV31500F1
- CGHV31500F
- CGHV27200-TB
- CGHV27200F
- CGHV27200
- CGHV27100-TB
- CGHV27100F/P
- CGHV27100F
- CGHV27100
- CGHV27060MP-TB
- CGHV27060MP-AMP4
- CGHV27060MP-AMP3
- CGHV27060MP-AMP1
- CGHV27060MP
- CGHV27030S-AMP5
- CGHV27030S-AMP4
- CGHV27030S-AMP3
- CGHV27030S-AMP2
- CGHV27030S-AMP1
- CGHV27030S
- CGHV27015S
- CGHV22200-TB
- CGHV22200F/P
- CGH-5
- CGH-3
- CGH-2
- CGH-1
- CGH_17
- CGDT76
- CGD944C
- CGD942C
- CGD923
- CGD914
- CGD888C
- CGD3.5K
- CGD2.5K
- CGD1042
- CGD1.5K
- CGB241
- CGB240B
- CGB240
- CG90SN
- CG90MS
CGHV27200F/P数据表相关新闻
CGHV96050F2
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 7.9-9.6GHz， 50 Watt
2019-12-7CGHV1J025D
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-18GHz， 25 Watt
2019-12-7CGHV50200F
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 4.4-5.0GHz， 200 Watt
2019-12-7CGHV60075D5
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-6.0GHz， 75 Watt
2019-12-7CGHV1J070D-GP4
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-18GHz， 70 Watt
2019-12-7CGHV1J006DRF晶体管
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-18GHz， 6 Watt
2019-12-7
DdatasheetPDF页码索引
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