C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space application

2.0A SUPER-FAST GLASS BODY RECTIFIER

Features • Hermetically Sealed Glass Body Construction • Controlled Avalanche Characteristics • Super-Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 50A Peak • Low Reverse Leakage Current

SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR)

文件：366.58 Kbytes Page：29 Pages

SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR)

文件：366.58 Kbytes Page：29 Pages

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件：927.34 Kbytes Page：31 Pages