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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CGH40180PP-AMP | 180 W, RF Power GaN HEMT 文件：2.16827 Mbytes Page：13 Pages | Cree 科锐 |   | |
CGH40180PP-AMP | 包装：散装 描述：CGH40180PP DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板 | WOLFSPEED | | |
180 W, RF Power GaN HEMT Description Wolfspeed's CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high | WOLFSPEED | | ||
180 W, RF Power GaN HEMT 文件：2.16827 Mbytes Page：13 Pages | Cree 科锐 | | ||
180 W, RF Power GaN HEMT 文件：2.16827 Mbytes Page：13 Pages | Cree 科锐 | | ||
Tone Generator and Amplifier Probe Kit 文件：200.83 Kbytes Page：1 Pages | EXTECH | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CORNELLDUBILIER-CDE |
25+ |
Bulk |
880000 |
明嘉莱只做原装正品现货 |
|||
CDE |
23+ |
76.2X142.875 |
53673 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Cornell-Dubilier |
新 |
5 |
全新原装 货期两周 |
||||
IRCTT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CREE |
23+ |
RF MOSFET |
50000 |
全新原装正品现货,支持订货 |
|||
Cornell-Dubilier |
2022+ |
1 |
全新原装 货期两周 |
||||
WOLFSPEED |
20+ |
射频元件 |
55 |
就找我吧!--邀您体验愉快问购元件! |
CGH40180PP-AMP规格书下载地址
CGH40180PP-AMP参数引脚图相关
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CGH40180PP-AMP数据表相关新闻
CGH5503003F
CGH5503003F
2021-10-26CGH600008D
CGHV1J006D CGHV1J070D CGHV60075D5 CGHV50200F CGHV1J025D CMPA0060025F CMPA601C025D CMPA2560025F CMPA0060002F CGHV96050F2 CGH40045F CGH40035F CMPA0060025D CGH55030F2/P2 CGH21240F CGH40180PP CGH40025F/P CGH40120F CGH40045F/P CGH40035F/P CGH600008D CGHV50200F
2019-12-7CGH40045F/P
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-4.0GHz， 45 Watt
2019-12-7CGH40120F
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-2.5GHz， 120 Watt
2019-12-7CGH40180PP
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-2.5GHz， 180 Watt
2019-12-7CGH55030F2/P2
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 4.5-6.0GHz， 25 Watt
2019-12-7
DdatasheetPDF页码索引
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