CGH40180价格
参考价格：￥3124.4762
型号：CGH40180PP 品牌：Cree 备注：这里有CGH40180多少钱，2026年最近7天走势，今日出价，今日竞价，CGH40180批发/采购报价，CGH40180行情走势销售排行榜，CGH40180报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CGH40180 | 180 W RF Power GaN HEMT The CGH40180PP is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40180PP; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth cap ·Up to 2.5 GHz Operation\n·20 dB Small Signal Gain at 1.0 GHz\n·15 dB Small Signal Gain at 2.0 GHz\n·220 W typical PSAT\n·70 % Efficiency at PSAT\n·28 V Operation; | MACOM |   | |
180 W, RF Power GaN HEMT Description Wolfspeed's CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high | WOLFSPEED | | ||
180 W, RF Power GaN HEMT 文件：2.16827 Mbytes Page：13 Pages | CREE 科锐 | | ||
180 W, RF Power GaN HEMT 文件：2.16827 Mbytes Page：13 Pages | CREE 科锐 | | ||
包装：散装 描述：CGH40180PP DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板 | WOLFSPEED | | ||
180 W, RF Power GaN HEMT 文件：2.16827 Mbytes Page：13 Pages | CREE 科锐 | | ||
包装：散装 描述：BOARD DEMO AMP CIRCUIT CGH40180 开发板，套件，编程器 射频评估和开发套件，开发板 | WOLFSPEED | | ||
40Amp Schottky Rectifier 文件：145.78 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
40 Amp Schottky Rectifier 文件：141.24 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
SINGLE PHASE STACKABLE CONTROLLER 文件：1.35488 Mbytes Page：52 Pages | TI 德州仪器 | | ||
SINGLE PHASE STACKABLE CONTROLLER 文件：1.35488 Mbytes Page：52 Pages | TI 德州仪器 | | ||
SINGLE PHASE STACKABLE CONTROLLER 文件：1.35488 Mbytes Page：52 Pages | TI 德州仪器 | |
CGH40180产品属性
- 类型
描述
- Min Frequency(MHz)：
0
- Max Frequency(MHz)：
3000
- Peak Output Power(W)：
180
- Gain(dB)：
15.0
- Efficiency(%)：
70
- Operating Voltage(V)：
28
- Form：
Packaged Discrete Transistor
- Package Category：
Push-Pull
- Technology：
GaN-on-SiC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
2023+ |
RFMOSFET |
6853 |
十五年行业诚信经营,专注全新正品 |
|||
Cree |
25+23+ |
BGA |
19489 |
绝对原装正品全新进口深圳现货 |
|||
Cree |
23+ |
高频管 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CREE |
25+ |
N/A |
10065 |
原装正品,有挂有货,假一赔十 |
|||
CREE |
26+ |
BGA |
21530 |
专业军工优势原装现货价格优惠 假一赔百 |
|||
CREE |
18+ |
SMD |
85600 |
保证进口原装可开17%增值税发票 |
|||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CREE |
23+ |
射频 |
7000 |
||||
CREE/科锐 |
最新 |
SMD |
9850 |
全新原装现货假一罚十 |
|||
CREE |
24+ |
SMD |
500 |
“芯达集团”专营军工百分之百原装进口 |
CGH40180芯片相关品牌
CGH40180规格书下载地址
CGH40180参数引脚图相关
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CGH40180数据表相关新闻
CGH5503003F
CGH5503003F
2021-10-26CGH40045F/P
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-4.0GHz， 45 Watt
2019-12-7CGH40120F
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-2.5GHz， 120 Watt
2019-12-7CGH40180PP
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-2.5GHz， 180 Watt
2019-12-7CGH55030F2/P2
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 4.5-6.0GHz， 25 Watt
2019-12-7CGH40045F
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-4.0GHz， 45 Watt
2019-12-7
DdatasheetPDF页码索引
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