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CD4012B价格

参考价格：￥0.9534

型号：CD4012BE 品牌：TEXAS 备注：这里有CD4012B多少钱，2026年最近7天走势，今日出价，今日竞价，CD4012B批发/采购报价，CD4012B行情走势销售排行榜，CD4012B报价。

型号	功能描述	生产厂家企业	LOGO
CD4012BNSR	丝印代码：CD4012B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BNSR.A	丝印代码：CD4012B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B	2 通道、4 输入、3V 至 18V 与非门 CD4011B, CD4012B, and CD4023B NAND gates provide the system designer with direct implementation of the NANDfunction and supplement the existing family of CMOS gates. All inputs and outputs are buffered.\n\n The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic • Propagation delay time = 60 ns (typ.) at CL = 50 pF, VDD = 10 V\n• Standardized symmetrical output characteristics\n• 100% tested for quiescent current at 20 V\n• Noise margin (over full package temperature range: 1 V at VDD = 5 V 2 V at VDD = 10 V 2.5 at VDD = 15 V\n• Meets all re;	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BE	丝印代码：CD4012BE；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE.A	丝印代码：CD4012BE；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BEE4	丝印代码：CD4012BE；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A	丝印代码：CD4012BF3A；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A.A	丝印代码：CD4012BF3A；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM	丝印代码：CD4012BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96	丝印代码：CD4012BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96.A	丝印代码：CD4012BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96E4	丝印代码：CD4012BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96G4	丝印代码：CD4012BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B-MIL	军用 2 通道 4 输入 3V 至 18V 与非门 CD4011B, CD4012B, and CD4023B NAND gates provide the system designer with direct implementation of the NANDfunction and supplement the existing family of CMOS gates. All inputs and outputs are buffered.\n\n The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic • Propagation delay time = 60 ns (typ.) at CL = 50 pF, VDD = 10 V\n• Standardized symmetrical output characteristics\n• 100% tested for quiescent current at 20 V\n• Noise margin (over full package temperature range: 1 V at VDD = 5 V 2 V at VDD = 10 V 2.5 at VDD = 15 V\n• Meets all re;	TI 德州仪器	TI
CD4012BMS	CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te	RENESAS 瑞萨	RENESAS
CD4012BMS	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	INTERSIL	INTERSIL
CD4012BPWR	丝印代码：CM012B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BPWR.A	丝印代码：CM012B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BE	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BEG4	封装/外壳：14-DIP（0.300"，7.62mm）包装：卷带（TR）描述：IC GATE NAND 2CH 4-INP 14DIP 集成电路（IC）门和反相器	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BF3A	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BF3AS2534	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM	封装/外壳：14-SOIC（0.154"，3.90mm 宽）包装：管件描述：IC GATE NAND 2CH 4-INP 14SOIC 集成电路（IC）门和反相器	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BME4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BMG4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BMG4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BMT	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BMT	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BMTE4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BNSR	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BNSR	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI

替换型号	功能描述	生产厂家企业	LOGO
CD4012	CMOS NAND Gates	INTERSIL	INTERSIL
CD4012	Dual 4-Input NOR(NAND) Gate	NSC 国半	NSC
CD4012	Dual 4-Input NOR(NAND) Gate	NSC 国半	NSC
CD4012	CMOS NAND GATES	TI 德州仪器	TI
HCC4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HCF4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HD14012B	Dual 4-input NAND Gate	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HEF4012BD	Dual 4-input NAND gate	PHILIPS 飞利浦	PHILIPS
HEF4012BP	Dual 4-input NAND gate	PHILIPS 飞利浦	PHILIPS
MC14012BCL	B-Suffix Series CMOS Gates	MOTOROLA 摩托罗拉	MOTOROLA
MC14012BCP	B-Suffix Series CMOS Gates	MOTOROLA 摩托罗拉	MOTOROLA
MC14012BCP	B-Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
MC14012BCP	B−Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
NTE4012B	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4012B	INPUT NAND GATE	RANDE	RANDE
TC4012BP	C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC	TOSHIBA 东芝	TOSHIBA

CD4012B产品属性

类型
描述
Supply voltage (Min) (V)：
3
Supply voltage (Max) (V)：
18
Number of channels (#)：
2
Inputs per channel：
4
IOL (Max) (mA)：
6.8
IOH (Max) (mA)：
-6.8
Input type：
Standard CMOS
Output type：
Push-Pull
Features：
Standard speed (tpd > 50ns)
Data rate (Max) (Mbps)：
8
Rating：
Catalog

CD4012B供应商更多...

更新时间：2026-5-16 16:09:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	CD4012BNSR	TI	22+	14SOIC	9000	原厂渠道,现货配单	询价
深圳市华康联电子科技有限公司	CD4012BNSR	TI	23+	NA	20000		询价
深圳市赛尔通科技有限公司	CD4012BNSR	TI	23+	14-SOP	65600		询价
深圳市宇创芯科技有限公司	CD4012BNSR	TI/德州仪器	24+	SOP-14	9600	原装现货,优势供应,支持实单!	询价
深圳市煦洪科技有限公司	CD4012BNSR	TI/德州仪器	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳诚思涵科技有限公司	CD4012BNSR	TI	23+	SOP16	5000	全新原装,支持实单,非诚勿扰	询价
深圳市毅创辉电子科技有限公司	CD4012BNSRG4	TI	23+	14-SOIC	15000	TI现货商!原装正品!	询价
深圳航星空电子技术有限公司	CD4012BNSR	TI	23+	SOP16	3200	公司只做原装，可来电咨询	询价
深圳市安富世纪电子有限公司	CD4012BNSR	Texas Instruments	23+		7300	专注配单,只做原装进口现货	询价
君宇国际实业有限公司	CD4012BNSR	TI	16+	SOP	10000	原装正品	询价

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CD4012B规格书下载地址

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2025-3-7
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CD4013BF3A 十年IC，因为专注，所以专业。
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CD4013BPWR，当天发货0755-82732291全新原装现货或门市自取.
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单功能门74LVC SMD / SMT 1门2输入1输出-32 mA和32 mA-40 C 4.5 ns 5.5 V 1.65 V逻辑门，2输出AND 5.5 V逻辑门，AND，MUX，NAND，NOR，OR，反相器，非反相器逻辑门，2个门2个输入逻辑门，1个输出与逻辑门，PDIP-14 TTL 4个门NAND逻辑门
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找IC，尽在114IC

CD4012B价格

CD4012B产品属性

CD4012B供应商更多...

CD4012B芯片相关品牌

CD4012B规格书下载地址

CD4012B参数引脚图相关

CD4012B数据表相关新闻

CD4011BF3A原装TI代理价格优势

CD4013BF3A 通信IC 十年IC，因为专注，所以专业。

CD4013BPWR

CD4011BF

CD4015BE 原装正品 假一赔十

CD4011BM

DdatasheetPDF页码索引

CD4015BE 原装正品假一赔十