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CD4012B价格

参考价格：￥0.9534

型号：CD4012BE 品牌：TEXAS 备注：这里有CD4012B多少钱，2025年最近7天走势，今日出价，今日竞价，CD4012B批发/采购报价，CD4012B行情走势销售排行榜，CD4012B报价。

型号	功能描述	生产厂家企业	LOGO
CD4012B	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012B	2 通道、4 输入、3V 至 18V 与非门	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BMS	CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te	RENESAS 瑞萨	RENESAS
CD4012BMS	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	Intersil	Intersil
CD4012BNSR	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BNSR.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BPWR	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BPWR.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BE	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BEG4	封装/外壳：14-DIP（0.300"，7.62mm）包装：卷带（TR）描述：IC GATE NAND 2CH 4-INP 14DIP 集成电路（IC）门和反相器	TI2 德州仪器	TI2
CD4012BF3A	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BF3AS2534	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	封装/外壳：14-SOIC（0.154"，3.90mm 宽）包装：管件描述：IC GATE NAND 2CH 4-INP 14SOIC 集成电路（IC）门和反相器	TI2 德州仪器	TI2
CD4012BM	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BME4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BMG4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BMG4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012B-MIL	军用 2 通道 4 输入 3V 至 18V 与非门	TI 德州仪器	TI
CD4012BMT	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BMT	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BMTE4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BNSR	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BNSR	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI

替换型号	功能描述	生产厂家企业	LOGO
CD4012	CMOS NAND Gates	Intersil	Intersil
CD4012	Dual 4-Input NOR(NAND) Gate	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC
CD4012	Dual 4-Input NOR(NAND) Gate	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC
CD4012	CMOS NAND GATES	TI 德州仪器	TI
HCC4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HCF4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HD14012B	Dual 4-input NAND Gate	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HEF4012BD	Dual 4-input NAND gate	Philips 飞利浦	Philips
HEF4012BP	Dual 4-input NAND gate	Philips 飞利浦	Philips
MC14012BCL	B-Suffix Series CMOS Gates	Motorola 摩托罗拉	Motorola
MC14012BCP	B-Suffix Series CMOS Gates	Motorola 摩托罗拉	Motorola
MC14012BCP	B-Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
MC14012BCP	B−Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
NTE4012B	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4012B	INPUT NAND GATE	RANDE	RANDE
TC4012BP	C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC	TOSHIBA 东芝	TOSHIBA

CD4012B产品属性

类型
描述
型号
CD4012B
制造商
TI
制造商全称
Texas Instruments
功能描述
CMOS NAND GATES

CD4012B供应商更多...

更新时间：2025-9-26 13:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	CD4012BCN	ROHM/罗姆	24+	SOT23-4	17860	公司现货库存,支持实单	询价
深圳市得捷芯城科技有限公司	CD4012BE	TI(德州仪器)	24+	标准封装	7443	原厂直销,大量现货库存,交期快。价格优,支持账期	询价
深圳市高捷芯城科技有限公司	CD4012BPWR	TI(德州仪器)	24+	TSSOP14	2317	只做原装,提供一站式配单服务,代工代料。BOM配单	询价
深圳市汇莱威科技有限公司	CD4012B	TI	24+	PDIP\|14	798400	免费送样原盒原包现货一手渠道联系	询价
深圳市云美电子科技有限公司	CD4012BCN	NS/国半	24+	DIP14	37935	郑重承诺只做原装进口现货	询价
深圳市新冠美科技有限公司	CD4012BE	TI	2+	DIP	5	原装现货	询价
深圳市向鸿伟业电子有限公司	CD4012BE	TI/德州仪器	2410+	DIP	50000	原装正品.假一赔百.正规渠道.原厂追溯.	询价
深圳市安富世纪电子有限公司	CD4012BCN	NS	23+	DIP14	8	全新原装正品现货,支持订货	询价
深圳市星佑电子有限公司	CD4012BF3A	TI	06+	DIP	500	绝对全新原装正品,现货假壹赔佰	询价
深圳市科恒伟业电子有限公司	CD4012BE	TI	24+	DIP	8500	只做原装正品假一赔十为客户做到零风险!!	询价

CD4012B芯片相关品牌

CD4012B规格书下载地址

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CD4012B数据表相关新闻

CD4011BF3A原装TI代理价格优势
CD4011BF3A原装TI代理价格优势
2025-3-7
CD4013BF3A 通信IC 十年IC，因为专注，所以专业。
CD4013BF3A 十年IC，因为专注，所以专业。
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CD4013BPWR，当天发货0755-82732291全新原装现货或门市自取.
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单功能门74LVC SMD / SMT 1门2输入1输出-32 mA和32 mA-40 C 4.5 ns 5.5 V 1.65 V逻辑门，2输出AND 5.5 V逻辑门，AND，MUX，NAND，NOR，OR，反相器，非反相器逻辑门，2个门2个输入逻辑门，1个输出与逻辑门，PDIP-14 TTL 4个门NAND逻辑门
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CD4015BE 原装正品假一赔十
原厂很远现货很近坚持每一片芯片都来自原厂及授权渠道
2020-5-8
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2019-8-9

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CD4012B价格

CD4012B产品属性

CD4012B供应商更多...

CD4012B芯片相关品牌

CD4012B规格书下载地址

CD4012B参数引脚图相关

CD4012B数据表相关新闻

CD4011BF3A原装TI代理价格优势

CD4013BF3A 通信IC 十年IC，因为专注，所以专业。

CD4013BPWR

CD4011BF

CD4015BE 原装正品 假一赔十

CD4011BM

DdatasheetPDF页码索引

CD4015BE 原装正品假一赔十