位置：首页 > IC中文资料第6451页 > MC14012BCL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MC14012BCL | B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 |   | |
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All | ONSEMI 安森美半导体 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS NAND Gates | INTERSIL | INTERSIL | | |
Dual 4-Input NOR(NAND) Gate | NSC 国半 | NSC | | |
Dual 4-Input NOR(NAND) Gate | NSC 国半 | NSC | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Dual 4-input NAND Gate | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | | |
Dual 4-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
Dual 4-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | | |
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NAND GATE | RANDE | RANDE | | |
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 东芝 | TOSHIBA | |
MC14012BCL产品属性
- 类型
描述
- 型号
MC14012BCL
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
B-Suffix Series CMOS Gates
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON Semiconductor |
22+ |
14DIP |
9000 |
原厂渠道,现货配单 |
|||
MOT |
24+ |
DIP14 |
821 |
||||
MOTOROLA/摩托罗拉 |
24+ |
DIP |
9600 |
原装现货,优势供应,支持实单! |
|||
MOT |
23+ |
CDIP14 |
204 |
全新原装正品现货,支持订货 |
|||
MOT |
93 |
DIP |
702 |
原装正品 |
|||
MOTOROLA/摩托罗拉 |
25+ |
DIP14 |
9800 |
全新原装现货,假一赔十 |
|||
MOTOROLA/摩托罗拉 |
22+ |
DIP |
12245 |
现货,原厂原装假一罚十! |
|||
MOTOROLA/摩托罗拉 |
2447 |
CDIP14 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MOTOROLA/摩托罗拉 |
23+ |
CDIP14 |
50000 |
全新原装正品现货,支持订货 |
|||
IDT |
23+ |
DIP-28 |
12000 |
全新原装假一赔十 |
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MC14012BCL规格书下载地址
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DdatasheetPDF页码索引
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