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CD4012价格

参考价格：￥10.3635

型号：CD4012AE 品牌：Semiconductors 备注：这里有CD4012多少钱，2025年最近7天走势，今日出价，今日竞价，CD4012批发/采购报价，CD4012行情走势销售排行榜，CD4012报价。

型号	功能描述	生产厂家企业	LOGO
CD4012	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	Intersil	Intersil
CD4012	Dual 4-Input NOR(NAND) Gate 文件：113.28 Kbytes Page：6 Pages	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC
CD4012	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012	Dual 4-Input NOR(NAND) Gate 文件：107.87 Kbytes Page：6 Pages	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC
CD4012	CMOS NAND Gates	RENESAS 瑞萨	RENESAS
CD4012	4路输入非门	XBLW 芯伯乐	XBLW
CD4012	2路4输入与非门	i-coreWUXI i-CORE Electronics Co., Ltd 中微爱芯无锡中微爱芯电子有限公司	i-core
CD4012A	CMOS NAND Gates Features: Quiescent current specified to 15 V Maximum input leakage of 1 uA at 15 V (full package-temperature range) 1-V noise margin (full package-temperature range)	TI 德州仪器	TI
CD4012B	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BMS	CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te	RENESAS 瑞萨	RENESAS
CD4012BMS	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	Intersil	Intersil
CD4012BNSR	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BNSR.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BPWR	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BPWR.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012A	CMOS NAND GATES 文件：371.28 Kbytes Page：7 Pages	TI 德州仪器	TI
CD4012A	CMOS NAND Gates 文件：200.37 Kbytes Page：4 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BE	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BEG4	封装/外壳：14-DIP（0.300"，7.62mm）包装：卷带（TR）描述：IC GATE NAND 2CH 4-INP 14DIP 集成电路（IC）门和反相器	TI2 德州仪器	TI2
CD4012BF3A	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BF3A	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BF3AS2534	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	封装/外壳：14-SOIC（0.154"，3.90mm 宽）包装：管件描述：IC GATE NAND 2CH 4-INP 14SOIC 集成电路（IC）门和反相器	TI2 德州仪器	TI2
CD4012BM	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM96	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BME4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BMG4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI

替换型号	功能描述	生产厂家企业	LOGO
HCC4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HCF4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HD14012B	Dual 4-input NAND Gate	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HEF4012BD	Dual 4-input NAND gate	Philips 飞利浦	Philips
HEF4012BP	Dual 4-input NAND gate	Philips 飞利浦	Philips
MC14012BCL	B-Suffix Series CMOS Gates	Motorola 摩托罗拉	Motorola
MC14012BCP	B-Suffix Series CMOS Gates	Motorola 摩托罗拉	Motorola
MC14012BCP	B-Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
MC14012BCP	B−Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
NTE4012B	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4012B	INPUT NAND GATE	RANDE	RANDE
TC4012BP	C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC	TOSHIBA 东芝	TOSHIBA

CD4012产品属性

类型
描述
型号
CD4012
制造商
NSC
制造商全称
National Semiconductor
功能描述
Dual 4-Input NOR(NAND) Gate

CD4012供应商更多...

更新时间：2025-9-26 11:51:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	CD4012BM	TI/德州仪器	25+	SOIC-14_150mil	4987	强势库存!绝对原装公司现货!	询价
深圳市拓亿芯电子有限公司	CD4012AF	RCA	23+	CDIP	30000	代理全新原装现货,价格优势	询价
深圳市欧立现代科技有限公司	CD4012BPWR	TI	24+	TSSOP14	7250	绝对原装现货,价格低,欢迎询购!	询价
上海意淼电子科技有限公司	CD4012BCN	NS	23+	NA	6500	全新原装假一赔十	询价
深圳市坤融电子科技有限公司	CD4012BF3A		24+	SOP8	6000	美国德州仪器TEXASINSTRUMENTS原厂代理辉华拓展内地现	询价
中天科工半导体（深圳）有限公司	CD4012BE	TI/德州仪器	25+	DIP-14	32000	TI/德州仪器全新特价CD4012BE即刻询购立享优惠#长期有货	询价
贸泽芯城（深圳）电子科技有限公司	CD40123BF3A		23+	CDIP	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
现代芯城（深圳）科技有限公司	CD4012AD3		24+	N/A	67000	一级代理-主营优势-实惠价格-不悔选择	询价
艾睿（深圳）半导体有限公司	CD4012AF	RCA	2447	CDIP	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	CD4012	HLF/洪利发	23+	DIPSOP	35000		询价

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CD4011BF3A原装TI代理价格优势
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CD4013BF3A 通信IC 十年IC，因为专注，所以专业。
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2020-7-17
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2020-5-8
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CD4012价格

CD4012产品属性

CD4012供应商更多...

CD4012芯片相关品牌

CD4012规格书下载地址

CD4012参数引脚图相关

CD4012数据表相关新闻

CD4011BF3A原装TI代理价格优势

CD4013BF3A 通信IC 十年IC，因为专注，所以专业。

CD4013BPWR

CD4011BF

CD4015BE 原装正品 假一赔十

CD4011BM

DdatasheetPDF页码索引

CD4015BE 原装正品假一赔十