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CD4012价格

参考价格：￥10.3635

型号：CD4012AE 品牌：Semiconductors 备注：这里有CD4012多少钱，2025年最近7天走势，今日出价，今日竞价，CD4012批发/采购报价，CD4012行情走势销售排行榜，CD4012报价。

型号	功能描述	生产厂家企业	LOGO
CD4012	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	Intersil	Intersil
CD4012	Dual 4-Input NOR(NAND) Gate 文件：113.28 Kbytes Page：6 Pages	NSC 国半	NSC
CD4012	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012	Dual 4-Input NOR(NAND) Gate 文件：107.87 Kbytes Page：6 Pages	NSC 国半	NSC
CD4012	CMOS NAND Gates	RENESAS 瑞萨	RENESAS
CD4012	4路输入非门	XBLW 芯伯乐	XBLW
CD4012	2路4输入与非门	i-coreWUXI i-CORE Electronics Co., Ltd 中微爱芯无锡中微爱芯电子有限公司	i-core
CD4012A	CMOS NAND Gates Features: Quiescent current specified to 15 V Maximum input leakage of 1 uA at 15 V (full package-temperature range) 1-V noise margin (full package-temperature range)	TI 德州仪器	TI
CD4012B	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BE.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BF3A.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012B-MIL	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BMS	CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te	RENESAS 瑞萨	RENESAS
CD4012BMS	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	Intersil	Intersil
CD4012BNSR	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BNSR.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BPWR	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012BPWR.A	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4012A	CMOS NAND Gates 文件：200.37 Kbytes Page：4 Pages	TI 德州仪器	TI
CD4012A	CMOS NAND GATES 文件：371.28 Kbytes Page：7 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012B	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BE	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BE	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BEE4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BEG4	封装/外壳：14-DIP（0.300"，7.62mm）包装：卷带（TR）描述：IC GATE NAND 2CH 4-INP 14DIP 集成电路（IC）门和反相器	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BF3A	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BF3A	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BF3AS2534	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM	封装/外壳：14-SOIC（0.154"，3.90mm 宽）包装：管件描述：IC GATE NAND 2CH 4-INP 14SOIC 集成电路（IC）门和反相器	TI 德州仪器	TI
CD4012BM96	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96E4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4012BM96G4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4012BME4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4012BMG4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI

替换型号	功能描述	生产厂家企业	LOGO
HCC4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HCF4012BF	NAND GATES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HD14012B	Dual 4-input NAND Gate	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HEF4012BD	Dual 4-input NAND gate	Philips 飞利浦	Philips
HEF4012BP	Dual 4-input NAND gate	Philips 飞利浦	Philips
MC14012BCL	B-Suffix Series CMOS Gates	Motorola 摩托罗拉	Motorola
MC14012BCP	B-Suffix Series CMOS Gates	Motorola 摩托罗拉	Motorola
MC14012BCP	B-Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
MC14012BCP	B−Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
NTE4012B	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4012B	INPUT NAND GATE	RANDE	RANDE
TC4012BP	C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC	TOSHIBA 东芝	TOSHIBA

CD4012产品属性

类型
描述
型号
CD4012
制造商
NSC
制造商全称
National Semiconductor
功能描述
Dual 4-Input NOR(NAND) Gate

CD4012供应商更多...

更新时间：2025-11-18 3:27:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市英卓尔科技有限公司	CD4012BM	TI	20+	SOP14	2960	诚信交易大量库存现货	询价
深圳市得捷芯城科技有限公司	CD4012BE	TI(德州仪器)	24+	标准封装	7443	原厂直销,大量现货库存,交期快。价格优,支持账期	询价
深圳市高捷芯城科技有限公司	CD4012BPWR	TI(德州仪器)	24+	TSSOP14	2317	只做原装,提供一站式配单服务,代工代料。BOM配单	询价
深圳市凌旭科技有限公司	CD4012BE	HARRIS	2016+	DIP	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	CD4012BE	TI	23+	NA	6500	全新原装假一赔十	询价
深圳市粤骏腾电子科技有限公司	CD4012	ST/意法	24+	DIP	300	大批量供应优势库存热卖	询价
深圳市金芯世纪电子有限公司	CD4012BF3A	TI/德州仪器	22+	DAP	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	CD4012BF	TI/德州仪器	25+	CDIP14	65248	百分百原装现货实单必成	询价
中天科工半导体（深圳）有限公司	CD4012BE	TI/德州仪器	25+	DIP-14	32000	TI/德州仪器全新特价CD4012BE即刻询购立享优惠#长期有货	询价
深圳市威雅利发展有限公司	CD4012BE	TI	21+	DIP	4350	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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CD4011BF3A原装TI代理价格优势
CD4011BF3A原装TI代理价格优势
2025-3-7
CD4013BF3A 通信IC 十年IC，因为专注，所以专业。
CD4013BF3A 十年IC，因为专注，所以专业。
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CD4013BPWR，当天发货0755-82732291全新原装现货或门市自取.
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单功能门74LVC SMD / SMT 1门2输入1输出-32 mA和32 mA-40 C 4.5 ns 5.5 V 1.65 V逻辑门，2输出AND 5.5 V逻辑门，AND，MUX，NAND，NOR，OR，反相器，非反相器逻辑门，2个门2个输入逻辑门，1个输出与逻辑门，PDIP-14 TTL 4个门NAND逻辑门
2020-7-17
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CD4012价格

CD4012产品属性

CD4012供应商更多...

CD4012芯片相关品牌

CD4012规格书下载地址

CD4012参数引脚图相关

CD4012数据表相关新闻

CD4011BF3A原装TI代理价格优势

CD4013BF3A 通信IC 十年IC，因为专注，所以专业。

CD4013BPWR

CD4011BF

CD4015BE 原装正品 假一赔十

CD4011BM

DdatasheetPDF页码索引

CD4015BE 原装正品假一赔十