CD4011BM价格

参考价格:¥0.8145

型号:CD4011BM 品牌:TI 备注:这里有CD4011BM多少钱,2025年最近7天走势,今日出价,今日竞价,CD4011BM批发/采购报价,CD4011BM行情走势销售排行榜,CD4011BM报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CD4011BM

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

TI

德州仪器

CD4011BM

Quad 2-Input NOR,NAND Buffered B Series Gate

文件:167.6 Kbytes Page:6 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

CD4011BM

Quad 2-Input NOR(NAND) Buffered B Series Gate

文件:164.76 Kbytes Page:6 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

CD4011BM

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

文件:523.01 Kbytes Page:12 Pages

TI

德州仪器

CD4011BM

CMOS NAND GATES

文件:1.29026 Mbytes Page:20 Pages

TI

德州仪器

CD4011BM

CMOS NAND GATES

文件:1.18484 Mbytes Page:19 Pages

TI

德州仪器

CD4011BM

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

CD4011BM

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器

TI2

德州仪器

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

TI

德州仪器

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

TI

德州仪器

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

TI

德州仪器

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

TI

德州仪器

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

TI

德州仪器

CMOS NAND Gates

Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te

RENESAS

瑞萨

CMOS NAND Gates

Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I

Intersil

CMOS NAND GATES

Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre

TI

德州仪器

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.29026 Mbytes Page:20 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.18484 Mbytes Page:19 Pages

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

文件:523.01 Kbytes Page:12 Pages

TI

德州仪器

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.18484 Mbytes Page:19 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.29026 Mbytes Page:20 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.29026 Mbytes Page:20 Pages

TI

德州仪器

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.18484 Mbytes Page:19 Pages

TI

德州仪器

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器

TI2

德州仪器

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.29026 Mbytes Page:20 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.18484 Mbytes Page:19 Pages

TI

德州仪器

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

Quad 2-Input NOR,NAND Buffered B Series Gate

文件:167.6 Kbytes Page:6 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

CMOS NAND Gates

RENESAS

瑞萨

CMOS NAND GATES

文件:1.29026 Mbytes Page:20 Pages

TI

德州仪器

CMOS NAND GATES

文件:1.18484 Mbytes Page:19 Pages

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

文件:523.01 Kbytes Page:12 Pages

TI

德州仪器

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

逻辑门

ETC

知名厂家

CMOS NAND GATES

文件:525.82 Kbytes Page:13 Pages

TI

德州仪器

Quadruple 2-input NAND gate

DESCRIPTION The HEF4011B provides the positive quadruple 2-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance

Philips

飞利浦

EPDM Snap-In Liquid Tight Bushings

文件:95.85 Kbytes Page:1 Pages

Heyco

Function Generators

文件:339.71 Kbytes Page:1 Pages

BK

B&K Precision Corporation

2 MHz Function Generator

文件:697.81 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

EPDM Snap-In Liquid Tight Bushings

文件:95.85 Kbytes Page:1 Pages

Heyco

替换型号 功能描述 生产厂家 企业 LOGO 操作

Quad 2-input NAND gate

ROHM

罗姆

High Voltage CMOS Logic ICs

ROHM

罗姆

High Voltage CMOS Logic ICs

ROHM

罗姆

CMOS NAND GATES

TI

德州仪器

Quad 2-Input NOR(NAND) Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

CMOS NAND GATES

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

CMOS NAND GATES

TI

德州仪器

NAND GATES

STMICROELECTRONICS

意法半导体

NAND GATES

STMICROELECTRONICS

意法半导体

Quadruple 2-input NAND Gate

HitachiHitachi Semiconductor

日立日立公司

Quadruple 2-input NAND gate

Philips

飞利浦

Quadruple 2-input NAND gate

Philips

飞利浦

B-Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

Motorola

摩托罗拉

B-SUFFIX SERIES CMOS GATES

ONSEMI

安森美半导体

B−Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

Motorola

摩托罗拉

B-SUFFIX SERIES CMOS GATES

ONSEMI

安森美半导体

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NAND GATE

RANDER & E International, Inc.

Quad 2 Input NAND Gate

TOSHIBA

东芝

C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

TOSHIBA

东芝

QUAD 2 INPUT NAND GATE

TOSHIBA

东芝

CD4011BM产品属性

  • 类型

    描述

  • 型号

    CD4011BM

  • 功能描述

    逻辑门 Quad 2-Input

  • RoHS

  • 制造商

    Texas Instruments

  • 产品

    OR

  • 逻辑系列

    LVC

  • 栅极数量

    2

  • 线路数量(输入/输出)

    2/1

  • 高电平输出电流

    - 16 mA

  • 低电平输出电流

    16 mA

  • 传播延迟时间

    3.8 ns

  • 电源电压-最大

    5.5 V

  • 电源电压-最小

    1.65 V

  • 最大工作温度

    + 125 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DCU-8

  • 封装

    Reel

更新时间:2025-9-23 20:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
三年内
1983
只做原装正品
TI(德州仪器)
24+
标准封装
7438
原厂直销,大量现货库存,交期快。价格优,支持账期
TI/TEXAS
23+
SO-14
8931
最新
2000
原装正品现货
TI
25+
标准封装
18000
原厂直接发货进口原装
TI/德州仪器
22+
SOIC-14_150mil
500000
原装现货支持实单价优/含税
TI
2430+
SOP14
8540
只做原装正品假一赔十为客户做到零风险!!
TI
25+23+
SMD
35837
绝对原装正品全新进口深圳现货
TI
23+
SOIC14
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
HAR
24+
SOP
175

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