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CD4011BM价格
参考价格:¥0.8145
型号:CD4011BM 品牌:TI 备注:这里有CD4011BM多少钱,2025年最近7天走势,今日出价,今日竞价,CD4011BM批发/采购报价,CD4011BM行情走势销售排行榜,CD4011BM报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
CD4011BM | CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | ||
CD4011BM | Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | ||
CD4011BM | Quad 2-Input NOR(NAND) Buffered B Series Gate 文件:164.76 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | ||
CD4011BM | The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | ||
CD4011BM | CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | ||
CD4011BM | CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | ||
CD4011BM | CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | ||
CD4011BM | 封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器 | TI2 德州仪器 | ||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te | RENESAS 瑞萨 | |||
CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I | Intersil | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器 | TI2 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
CMOS NAND Gates | RENESAS 瑞萨 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
逻辑门 | ETC 知名厂家 | ETC | ||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
Quadruple 2-input NAND gate DESCRIPTION The HEF4011B provides the positive quadruple 2-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance | Philips 飞利浦 | |||
EPDM Snap-In Liquid Tight Bushings 文件:95.85 Kbytes Page:1 Pages | Heyco | |||
Function Generators 文件:339.71 Kbytes Page:1 Pages | BK B&K Precision Corporation | |||
2 MHz Function Generator 文件:697.81 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
EPDM Snap-In Liquid Tight Bushings 文件:95.85 Kbytes Page:1 Pages | Heyco |
替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
Quad 2-input NAND gate | ROHM 罗姆 | ROHM | ||
High Voltage CMOS Logic ICs | ROHM 罗姆 | ROHM | ||
High Voltage CMOS Logic ICs | ROHM 罗姆 | ROHM | ||
CMOS NAND GATES | TI 德州仪器 | TI | ||
Quad 2-Input NOR(NAND) Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
CMOS NAND GATES | TI 德州仪器 | TI | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | ||
CMOS NAND GATES | TI 德州仪器 | TI | ||
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Quadruple 2-input NAND Gate | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Quadruple 2-input NAND gate | Philips 飞利浦 | Philips | ||
Quadruple 2-input NAND gate | Philips 飞利浦 | Philips | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
INPUT NAND GATE | RANDER & E International, Inc. | RANDE | ||
Quad 2 Input NAND Gate | TOSHIBA 东芝 | TOSHIBA | ||
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 东芝 | TOSHIBA | ||
QUAD 2 INPUT NAND GATE | TOSHIBA 东芝 | TOSHIBA |
CD4011BM产品属性
- 类型
描述
- 型号
CD4011BM
- 功能描述
逻辑门 Quad 2-Input
- RoHS
否
- 制造商
Texas Instruments
- 产品
OR
- 逻辑系列
LVC
- 栅极数量
2
- 线路数量(输入/输出)
2/1
- 高电平输出电流
- 16 mA
- 低电平输出电流
16 mA
- 传播延迟时间
3.8 ns
- 电源电压-最大
5.5 V
- 电源电压-最小
1.65 V
- 最大工作温度
+ 125 C
- 安装风格
SMD/SMT
- 封装/箱体
DCU-8
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI(德州仪器) |
24+ |
标准封装 |
7438 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
TI/TEXAS |
23+ |
SO-14 |
8931 |
||||
最新 |
2000 |
原装正品现货 |
|||||
TI |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
TI/德州仪器 |
22+ |
SOIC-14_150mil |
500000 |
原装现货支持实单价优/含税 |
|||
TI |
2430+ |
SOP14 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI |
25+23+ |
SMD |
35837 |
绝对原装正品全新进口深圳现货 |
|||
TI |
23+ |
SOIC14 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
HAR |
24+ |
SOP |
175 |
CD4011BM规格书下载地址
CD4011BM参数引脚图相关
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2019-8-9
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