MC14011价格
参考价格：￥0.3384
型号：MC14011BDG 品牌：ON 备注：这里有MC14011多少钱，2026年最近7天走势，今日出价，今日竞价，MC14011批发/采购报价，MC14011行情走势销售排行榜，MC14011报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MC14011 | B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 |   | |
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | ||
四路 2 输入 NAND 门极 B 系列逻辑门极是使用 P 和 N 沟道增强模式器件，在一个单片结构中构建的（互补 MOS）。其主要用途是需要低功耗和/或高抗扰度的场合。 • Supply Voltage Range = 3.0 Vdc to 18 Vdc\n• All Outputs Buffered\n• Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.\n• Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B\n• Pin-for-Pin Repla; | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | MOTOROLA 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
MC14009N [UNITRA CEMI] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
四路 2 输入 NAND 门极 The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non-buffered functions. • Supply Voltage Range = 3.0 Vdc to 18 Vdc\n• Linear and Oscillator Applications\n• Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range\n• Double Diode Protection on All Inputs\n• Pin-for-Pin Replacements for Corresponding CD4000 Series UB S; | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：195.05 Kbytes Page：14 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：144.39 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：144.39 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Quad 2-input NAND gate | ROHM 罗姆 | ROHM | | |
High Voltage CMOS Logic ICs | ROHM 罗姆 | ROHM | | |
High Voltage CMOS Logic ICs | ROHM 罗姆 | ROHM | | |
Quad 2-Input NOR(NAND) Buffered B Series Gate | NSC 国半 | NSC | | |
Quad 2-Input NOR,NAND Buffered B Series Gate | NSC 国半 | NSC | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
Quad 2-Input NOR,NAND Buffered B Series Gate | NSC 国半 | NSC | | |
Quad 2-Input NOR,NAND Buffered B Series Gate | NSC 国半 | NSC | | |
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate | FAIRCHILD 仙童半导体 | FAIRCHILD | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Quadruple 2-input NAND Gate | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | | |
Quadruple 2-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
Quadruple 2-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NAND GATE | RANDE | RANDE | | |
Quad 2 Input NAND Gate | TOSHIBA 东芝 | TOSHIBA | | |
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 东芝 | TOSHIBA | | |
QUAD 2 INPUT NAND GATE | TOSHIBA 东芝 | TOSHIBA | |
MC14011产品属性
- 类型
描述
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Type：
NAND
- Channels：
4
- VCC Min (V)：
3
- VCC Max (V)：
18
- tpd Max (ns)：
100
- IO Max (mA)：
null
- Package Type：
SOIC-14
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
SOP14 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON(安森美) |
23+ |
13929 |
公司只做原装正品,假一赔十 |
||||
ON(安森美) |
25+ |
SOIC-14_150mil |
11543 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ONSEMI/安森美 |
2025+ |
SOP |
4000 |
原装进口价格优 请找坤融电子! |
|||
ONSEMI |
25+ |
401 |
全新原装!优势库存热卖中! |
||||
ON |
24+ |
SOP14 |
42500 |
专注原装正品!现货库存! |
|||
ON/安森美 |
24+ |
SOP |
90125 |
郑重承诺只做原装进口现货 |
|||
ON(安森美) |
2511 |
1265 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
||||
ONSEMI/安森美 |
24+ |
SOP14 |
4101 |
全新原装正品现货可开票 |
|||
ON |
23+ |
SOP-14 |
113400 |
原装现货,价格优势,诚信经营 |
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DdatasheetPDF页码索引
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