NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR Applications Suitable for Lighting, Switching Regulator and Motor Control

NON SILICON POWER TRANSISTOR

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NPN SILICON POWER TRANSISTOR

Silicon Power Transistor

Features • With Built - in Integrated Diode between Emitter & Collector • This product is available in AEC-Q101 Compliant and PPAP Capable also. Applications • Suitable for Lighting, Switching Regulator and Motor Control Description Silicon Power Transistor, NPN, TO-126

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR With Built - in Integrated Diode between Emitter & Collector TO126 Plastic Package

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt