16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION

DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle

16K 2K x 8 PCMCIA Nonvolatile Attribute Memory

Description The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycl

16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION

DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle

16 Kbit 2Kb x8 Parallel EEPROM

DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V

16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection

DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A