16K 2K x 8 PCMCIA Nonvolatile Attribute Memory

Description The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycl

16K (2K x 8) Parallel EEPROMs

文件：247.81 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 PCMCIA Nonvolatile Attribute Memory

Description The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycl

16K 2K x 8 PCMCIA Nonvolatile Attribute Memory

Description The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycl

16K 2K x 8 PCMCIA Nonvolatile Attribute Memory

Description The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycl

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

16K 2K x 8 PCMCIA Nonvolatile Attribute Memory

Description The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycl

16K 2K x 8 CMOS E2PROM

Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28C1

Self-Timed Byte Write Cycle

文件：179.83 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：247.81 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：247.81 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

封装/外壳：32-LCC（J 形引线） 包装：管件 描述：IC EEPROM 16KBIT PARALLEL 32PLCC 集成电路（IC） 存储器

封装/外壳：24-DIP（0.600"，15.24mm） 包装：管件 描述：IC EEPROM 16KBIT PARALLEL 24DIP 集成电路（IC） 存储器

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：247.81 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：247.81 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：247.81 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：247.81 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

16K (2K x 8) Parallel EEPROMs

文件：176.39 Kbytes Page：12 Pages

Ideal Rewritable Attribute Memory

文件：104.86 Kbytes Page：12 Pages

16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION

DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

16K (2K x 8) CMOS EEPROM

文件：125.8 Kbytes Page：10 Pages

16K (2K x 8) CMOS EEPROM

文件：125.8 Kbytes Page：10 Pages

16K (2K x 8) CMOS EEPROM

文件：125.8 Kbytes Page：10 Pages