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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28C16 | 16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28C16产品属性
- 类型
描述
- 型号
M28C16
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
75 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
OKI |
23+ |
DIP24 |
20000 |
全新原装假一赔十 |
|||
OKI |
24+ |
DIP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST/意法 |
25+ |
原厂原封可拆样 |
54687 |
百分百原装现货 实单必成 |
|||
OKI |
08+ |
DIP-24 |
357 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SGS |
24+/25+ |
5 |
原装正品现货库存价优 |
||||
ST |
1836+ |
PLCC32 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
ST |
24+ |
PLCC |
12000 |
原装正品 有挂就有货 |
|||
SGS |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
OKI |
02+ |
DIP24 |
3560 |
全新原装进口自己库存优势 |
M28C16芯片相关品牌
M28C16规格书下载地址
M28C16参数引脚图相关
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M28C16数据表相关新闻
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M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
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深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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