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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28C16 | 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 |   | |
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | | ||
16 Kbit 2Kb x8 Parallel EEPROM DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V | STMICROELECTRONICS 意法半导体 | |
M28C16产品属性
- 类型
描述
- 型号
M28C16
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OKI |
23+ |
DIP24 |
20000 |
全新原装假一赔十 |
|||
OKI |
08+ |
DIP-24 |
357 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SGS |
24+/25+ |
5 |
原装正品现货库存价优 |
||||
OKI |
25+ |
DIP |
20000 |
原装 |
|||
OKI |
1998+ |
TSOP-24 |
350 |
原装现货海量库存欢迎咨询 |
|||
ST |
23+ |
SO-24 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
OKI |
02+ |
DIP24 |
3560 |
全新原装进口自己库存优势 |
|||
OKI |
25+ |
1 |
公司优势库存 热卖中!! |
||||
SGS |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
OKI |
24+ |
9850 |
公司原装现货/随时可以发货 |
M28C16规格书下载地址
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2021-11-11M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19M25P40-VMN6TPB 假一罚十
专业一系列芯片，只做原装正品，欢迎咨询谢谢！
2020-12-30M27C512-15F1 储存器 代理渠道 ，进口原装
M27C512-15F1 代理渠道 ，进口原装
2020-10-29M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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