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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28C16 | 16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa5Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicrocontrolle | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16K(2Kx8)LOWVOLTAGEPARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28LV16isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpowerdissipationandrequiresa2.7Vto3.6Vpowersupply.Thecircuithasbeendesignedtoofferaflexiblemicroc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M28C16产品属性
- 类型
描述
- 型号
M28C16
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
93+ |
PLCC |
745 |
原装正品现货,可开发票,假一赔十 |
|||
OKI |
22+ |
DIP |
32350 |
原装正品 假一罚十 公司现货 |
|||
SGS |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
||||
ST |
23+ |
SOP24 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST/意法 |
22+/23+ |
PLCC |
9800 |
原装进口公司现货假一赔百 |
|||
OKI |
22+ |
DIP |
330 |
原装现货假一赔十 |
|||
2023+ |
DIP |
3000 |
进口原装现货 |
||||
ST |
10+ |
SOP-26 |
7800 |
全新原装正品,现货销售 |
|||
FUJITSU |
23+ |
PLCC32 |
9516 |
||||
ST |
2020+ |
DIP |
350000 |
100%进口原装正品公司现货库存 |
M28C16芯片相关品牌
M28C16规格书下载地址
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M28C16数据表相关新闻
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2019-6-18
DdatasheetPDF页码索引
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