16 Kbit 2Kb x8 Parallel EEPROM

DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power ParallelEEPROMfabricatedwith STMicroelectron ics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. FAST ACCESS TIME: – 150ns at 5V

16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION

DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power supply. The circuit has been designed to offer a flexible microc

16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION

DESCRIPTION The M28C16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The circuit has been designed to offer a flexible micro controlle

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

16K (2K x 8) CMOS EEPROM

文件：125.8 Kbytes Page：10 Pages

16K (2K x 8) CMOS EEPROM

文件：125.8 Kbytes Page：10 Pages

16K (2K x 8) CMOS EEPROM

文件：125.8 Kbytes Page：10 Pages