丝印代码：C802FS；LMR38020 SIMPLE SWITCHER짰 4.2-V to 80-V, 2-A Synchronous Buck Converter with 40-關A IQ

文件：2.16879 Mbytes Page：39 Pages

RG 59/U Type Coaxial & 2/C 18 AWG Siamese CCTV - Cable

文件：35.04 Kbytes Page：1 Pages

包装：散装 描述：CABLE COAXIAL RG59 22AWG 1000' 电缆，电线 同轴电缆（射频）

RG 59/U Type Coaxial & 2/C 22 AWG Shielded Siamese CCTV - Cable

文件：36.1 Kbytes Page：2 Pages

包装：线轴 描述：CABLE COAXIAL RG59 22AWG 500' 电缆，电线 同轴电缆（射频）

RG 59/U Type Coaxial & 2/C 18 AWG Shielded Siamese CCTV - Cable

文件：35.86 Kbytes Page：2 Pages

RG 59/U Type Coaxial & 2/C 18 AWG Siamese CCTV - Cable

文件：37.27 Kbytes Page：2 Pages

RG 6/U Type Coaxial & 2/C 18 AWG Siamese CCTV - Cable

文件：36.22 Kbytes Page：2 Pages

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat