COMMAND SERIES

2C 18AWG 16/30BC PP, PVC COMMAND® SERIES

IESNA Type II (medium) beam with added house side backlight

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包装：托盘 描述：MULTI-LENS SQUARE 4 POS 50.0MM 光电器件 光学 - 镜头

光电附件

IESNA Type III (medium) beam with excellent back light control,

文件：2.82077 Mbytes Page：7 Pages

光电附件

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V