SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Super low on-resistance RDS(on)1 = 5.8 mΩ TYP. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ TYP. (VGS = 4.5 V, ID = 7.0 A) RDS(on)3 = 8.0 mΩ TYP. (VGS = 4.0 V, ID = 7.0 A) • Low Ciss : Ciss = 3000 pF TYP. • Built-in G-S protectio

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThis product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.FEATURES\n• Super Low on-resistance\n   RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A)\n   RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A)\n  • Super Low on-resistance\n   RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A)\n   RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A)\n   RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A)\n• Low Ciss : Ciss = 3000 pF (TYP.)\n• Built-in G-S protection diode\n• Small and surface mount package (Power;

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe µPA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.FEATURES\n• Low on-state resistance\n   RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A)\n   RDS(on)2 = 10.0 mΩ MAX. (VGS = • Low on-state resistance\n   RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A)\n   RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)\n• Low Ciss: Ciss = 3000 pF TYP. (VDS = 10 V, VGS = 0 V)\n• Small and surface mount package (Power HSOP8) ;

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS =

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The µPA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 10.0

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.