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BU1706A晶体管资料

  • BU1706A别名:BU1706A三极管、BU1706A晶体管、BU1706A晶体三极管

  • BU1706A生产厂家

  • BU1706A制作材料:Si-NPN

  • BU1706A性质:开关管 (S)_功率放大 (L)

  • BU1706A封装形式:直插封装

  • BU1706A极限工作电压:1750V

  • BU1706A最大电流允许值:5A

  • BU1706A最大工作频率:<1MHZ或未知

  • BU1706A引脚数:3

  • BU1706A最大耗散功率:100W

  • BU1706A放大倍数

  • BU1706A图片代号:B-10

  • BU1706Avtest:1750

  • BU1706Ahtest:999900

  • BU1706Aatest:5

  • BU1706Awtest:100

  • BU1706A代换 BU1706A用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
BU1706A

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

PHILIPS

飞利浦

BU1706A

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Speed Switching APPLICATIONS • Designed for use in high frequency electronic lighting ballast applications.

ISC

无锡固电

BU1706A

Trans GP BJT NPN 850V 5A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Diffused Power Transistor

ETC

知名厂家

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.

PHILIPS

飞利浦

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Speed Switching APPLICATIONS • Designed for use in high frequency electronic lighting ballast applications.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage • High speed switching APPLICATIONS • For use in high frequency electronic lighting ballast applications.

SAVANTIC

Silicon NPN Power Transistors

文件:206.27 Kbytes Page:3 Pages

SAVANTIC

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

NEC

瑞萨

BU1706A产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Emitter Saturation Voltage:

    1@0.3A@1.5AV

  • Maximum Collector Emitter Voltage:

    850V

  • Maximum DC Collector Current:

    5A

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    100000mW

  • Type:

    NPN

更新时间:2026-7-23 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
23+
NA
20000
全新原装假一赔十
PHI
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
恩XP
22+
TO-220F
90185
PHI
25+23+
TO220
21132
绝对原装正品全新进口深圳现货
PHI
05+
原厂原装
8051
只做全新原装真实现货供应
FAIRCHILD
23+
TO-220F
1
PHI
24+
11000
恩XP
25+
TO-263
20000
本公司 只做全新原装正品
PHI
99+
TO-220
266
全新 发货1-2天
PHI
23+
TO-220
70000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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