位置:首页 > IC中文资料第5579页 > BU1706AX

BU1706AX晶体管资料

  • BU1706AX别名:BU1706AX三极管、BU1706AX晶体管、BU1706AX晶体三极管

  • BU1706AX生产厂家

  • BU1706AX制作材料:Si-NPN

  • BU1706AX性质:LSO

  • BU1706AX封装形式:直插封装

  • BU1706AX极限工作电压:1750V

  • BU1706AX最大电流允许值:5A

  • BU1706AX最大工作频率:<1MHZ或未知

  • BU1706AX引脚数:3

  • BU1706AX最大耗散功率:32W

  • BU1706AX放大倍数

  • BU1706AX图片代号:B-10

  • BU1706AXvtest:1750

  • BU1706AXhtest:999900

  • BU1706AXatest:5

  • BU1706AXwtest:32

  • BU1706AX代换 BU1706AX用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
BU1706AX

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.

PHILIPS

飞利浦

BU1706AX

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Speed Switching APPLICATIONS • Designed for use in high frequency electronic lighting ballast applications.

ISC

无锡固电

BU1706AX

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage • High speed switching APPLICATIONS • For use in high frequency electronic lighting ballast applications.

SAVANTIC

BU1706AX

Silicon NPN Power Transistors

文件:206.27 Kbytes Page:3 Pages

SAVANTIC

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

PHILIPS

飞利浦

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

NEC

瑞萨

BU1706AX产品属性

  • 类型

    描述

  • 型号

    BU1706AX

  • 制造商

    SAVANTIC

  • 制造商全称

    Savantic, Inc.

  • 功能描述

    Silicon NPN Power Transistors

更新时间:2026-5-18 18:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIRSCHMANN
24+/25+
2000
原装正品现货库存价优
恩XP
22+
TO-220F
90185
VISHAY/威世
2450+
DIP4
9485
只做原装正品现货或订货假一赔十!
FAIRCHILD
23+
TO-220F
1
VISHAY
DIP
53650
一级代理 原装正品假一罚十价格优势长期供货
PHI
25+23+
TO220
21132
绝对原装正品全新进口深圳现货
VISHAY/威世
25+
DIP-4
30000
全新原装现货,价格优势
PHI
24+
11000
VISHAY
23+
DIP
2525
原厂原装正品
VISHAY
原厂封装
9800
原装进口公司现货假一赔百

BU1706AX数据表相关新闻