N-channel TrenchMOS logic level FET

1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Very low on-state resistance n Q101 compliant n 175 °C

N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive aval

N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive av

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

包装：卷带（TR） 描述：MOSFET N-CH LFPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

N-channel TrenchMOS logic level FET

文件：96.08 Kbytes Page：12 Pages

N-channel 100 V, 113 m logic level MOSFET in LFPAK56

N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56

N-channel 100 V, 113 m廓 logic level MOSFET in LFPAK56

文件：307.72 Kbytes Page：13 Pages

N-channel 80 V, 11 m廓 logic level MOSFET in LFPAK56

N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

N-channel 80 V, 11 m廓 logic level MOSFET in LFPAK56

文件：323.19 Kbytes Page：13 Pages