1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

n Very low on-state resistance n Q101 compliant

n 175 °C rated n Logic level compatible

n Automotive systems n General purpose power switching

n Motors, lamps and solenoids n 12 V loads

n EDS(AL)S £ 112 mJ n RDSon = 9.3 mW (typ)

n ID £ 59 A n Ptot £ 75 W