TrenchMOS??transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance. It is intended for use in automotive and general purpose switching applicati

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

文件：182.95 Kbytes Page：12 Pages

Bipolar linear integrated circuit

Features Small working current AM: 7mA, FM: 10mA (typical value) Few external components Strong howling suppression capability and low signal overload distortion With tuned LED indication driver: Ilamp=10mA (maximum value) FM/AM mode switch built-in public FM/AM output Working power supply v

CABLE CLAMPS AND TIES

文件：104.09 Kbytes Page：2 Pages

1 kV RMS Six-Channel Digital Isolators

文件：392.7 Kbytes Page：20 Pages

1 kV RMS Six-Channel Digital Isolators

文件：392.7 Kbytes Page：20 Pages

1 kV RMS Six-Channel Digital Isolators

文件：392.7 Kbytes Page：20 Pages