TRENCHMOS-TM STANDARD LEVELl FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7508-40B in SOT78 (TO-220AB) BUK7608-40B in SOT404 (D2-PAK). Features ■Very low on-s

N-channel TrenchMOS standard level FET

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 40V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

TrenchMOSÔ transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive systems ■

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

文件：202.06 Kbytes Page：12 Pages

TrenchMOS transistor Standard level FET

文件：66.57 Kbytes Page：8 Pages

BUK7608-55 - N-channel TrenchMOS standard level FET

TrenchMOS transistor Standard level FET

文件：60.25 Kbytes Page：8 Pages

N-channel TrenchMOS standard level FET

文件：196.26 Kbytes Page：14 Pages

8-Channel Differential DAS with 18-Bit, Bipolar, Simultaneous Sampling ADC

GENERAL DESCRIPTION The AD7609 is an 18-bit, 8-channel, true differential, simultaneous sampling analog-to-digital data acquisition system (DAS). The part contains analog input clamp protection, a second-order antialiasing filter, a track-and-hold amplifier, an 18-bit charge redistribution succes

8-Channel DAS with 18-Bit, Bipolar, Simultaneous Sampling ADC

GENERAL DESCRIPTION The AD7608 is an 18-bit, 8-channel simultaneous sampling, analog-to-digital data acquisition system (DAS). The part contains analog input clamp protection, a second-order antialiasing filter, a track-and-hold amplifier, an 18-bit charge redistribution successive approximation

HOLE PLUGS & BUSHINGS

文件：313.08 Kbytes Page：1 Pages

HOLE PLUGS and BUSHINGS

文件：320.57 Kbytes Page：1 Pages

8-Channel Differential DAS with 18-Bit

文件：799.95 Kbytes Page：36 Pages