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BUK75价格
参考价格:¥7.3361
型号:BUK7506-55A,127 品牌:NXP Semiconductors 备注:这里有BUK75多少钱,2024年最近7天走势,今日出价,今日竞价,BUK75批发/采购报价,BUK75行情走势销售排行榜,BUK75报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BUK75 | N-channel TrenchMOS standard level FET 文件:90.61 Kbytes Page:14 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Productavailability: BUK7504-40AinSOT78(TO-220AB);BUK7604-40AinSOT404(D2-PAK); BUK7E04-40AinSOT226(I2-PAK). Feature | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=40V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technologywhichfeaturesverylowon-stateresistance.Itisintendedforuseinautomotiveandgeneralpurposeswitchingapplications. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=30V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
TrenchMOS standard level FET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7506-55BinSOT78(TO-220AB) BUK7606-55BinSOT404(D2-PAK). Features ■Verylowon-stateresistan | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotiveTrenchMOS™technology. Productavailability: BUK7506-75BinSOT78(TO-220AB) BUK7606-75BinSOT404(D2-PAK). Features ■Verylowon-stateresistance. ■ | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=75V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS standard level FET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=30V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7507-55BinSOT78(TO-220AB) BUK7607-55BinSOT404(D2-PAK). Features ■Verylow | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
N-channel TrenchMOS standard level FET Generaldescription N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusing NXPHigh-PerformanceAutomotive(HPA)TrenchMOStechnology. Features ■Verylowon-stateresistance ■Q101compliant ■175°Crated ■Standardlevelcompatible Applications ■Automotive | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
TRENCHMOS-TM STANDARD LEVELl FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7508-40BinSOT78(TO-220AB) BUK7608-40BinSOT404(D2-PAK). Features ■Verylowon-s | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=40V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Standardlevelcompatible. Applications ■Automotivesystems ■ | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Standardlevelcompatible. Applications ■Automotivesystems ■ | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS standard level FET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=75V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
N-channel TrenchMOS standard level FET Generaldescription N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsGeneral-PurposeAutomotive(GPA)TrenchMOS™technologyspecificallyoptimizedforlinearoperation. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Stableoperat | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
N-channel TrenchMOS standard level FET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■ | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=75(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchin | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
TrenchMOS standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeavailableinTO220ABandSOT404.Using’trench’technologywhichfeaturesverylowon-stateresistance.Itisintendedforuseinautomotiveandgeneralpurposeswitchingapplication | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits • | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |
BUK75产品属性
- 类型
描述
- 型号
BUK75
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
N-channel TrenchMOS standard level FET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP |
2016+ |
TO-220 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ETROMTECH |
23+ |
QFP |
12000 |
全新原装假一赔十 |
|||
NXP |
2020+ |
TO220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NXP(恩智浦) |
23+ |
标准封装 |
22048 |
全新原装正品/价格优惠/质量保障 |
|||
Nexperia USA Inc. |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
NXP(恩智浦) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
PH原装 |
98+ |
TO-220 |
105 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NXP/恩智浦 |
1948+ |
TO-220 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
Nexperia(安世) |
23+ |
TO220AB3 |
6000 |
||||
NPX/飞利浦 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
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- BUL118D
- BUL118
- BUL116D
- BUL116
- BUK753R1-40E,127
- BUK7535-55A,127
- BUK7535-100A,127
- BUK752R3-40E,127
- BUK7528-55A,127
- BUK7528-100A,127
- BUK7526-100B,127
- BUK7520-100A,127
- BUK751R8-40E,127
- BUK7516-55A,127
- BUK7513-75B,127
- BUK7511-55B,127
- BUK7510-100B,127
- BUK7509-75A,127
- BUK7509-55A,127
- BUK7508-55A,127
- BUK7508-40B,127
- BUK7507-55B,127
- BUK7507-30B,127
- BUK7506-55A,127
- BUK7277-55A,118
- BUK7275-100A,118
- BUK725R0-40C,118
- BUK724R5-30C,118
- BUK7240-100A,118
- BUK7237-55A,118
- BUK7230-55A,118
- BUK7227-100B,118
- BUK7226-75A,118
- BUK7219-55A,118
- BUK7215-55A,118
- BUK72150-55A,118
- BUK7214-75B,118
- BUK7212-55B,118
- BUK7210-55B,118
- BUK7208-40B,118
- BUK7207-30B,118
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- BUK7109-75ATE,118
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- BUJ403
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- BUJ303B
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- BUJ302
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- BUJ205A
- BUJ204A
- BUJ202A
- BUJ106A
- BUJ105A
- BUJ103A
- BUJ103
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