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BUK75价格
参考价格：￥7.3361
型号：BUK7506-55A,127 品牌：NXP Semiconductors 备注：这里有BUK75多少钱，2025年最近7天走势，今日出价，今日竞价，BUK75批发/采购报价，BUK75行情走势销售排行榜，BUK75报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUK75 | N-channel TrenchMOS standard level FET | ETC 知名厂家 | ETC |   |
TrenchMOS standard level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK); BUK7E04-40A in SOT226 (I2-PAK). Feature | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 40V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS transistor Standard level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen | Philips 飞利浦 | | ||
TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS standard level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7506-55B in SOT78 (TO-220AB) BUK7606-55B in SOT404 (D2-PAK). Features ■ Very low on-state resistan | Philips 飞利浦 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS standard level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). Features ■ Very low on-state resistance. ■ | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 75V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS standard level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D2-PAK). Features ■ Very low | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
TRENCHMOS-TM STANDARD LEVELl FET Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7508-40B in SOT78 (TO-220AB) BUK7608-40B in SOT404 (D2-PAK). Features ■Very low on-s | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 40V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen | Philips 飞利浦 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
TrenchMOS standard level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive systems ■ | Philips 飞利浦 | | ||
TrenchMOS standard level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive systems ■ | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 75V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen | Philips 飞利浦 | | ||
N-channel TrenchMOS standard level FET General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically optimized for linear operation. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Stable operat | Philips 飞利浦 | | ||
N-channel TrenchMOS standard level FET | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 75(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchin | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen | Philips 飞利浦 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen | Philips 飞利浦 | | ||
TrenchMOS standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching application | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi | ISC 无锡固电 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen | Philips 飞利浦 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and gen | Philips 飞利浦 | |
BUK75产品属性
- 类型
描述
- 型号
BUK75
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
N-channel TrenchMOS standard level FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
NA/ |
4545 |
原装现货,当天可交货,原型号开票 |
|||
恩XP |
24+ |
标准封装 |
22048 |
全新原装正品/价格优惠/质量保障 |
|||
DIODES/美台 |
24+ |
SOT323 |
45000 |
公司现货库存,支持实单 |
|||
PHI |
25+ |
TO-220 |
1295 |
原装正品,假一罚十! |
|||
恩XP |
2430+ |
TO-220 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PHI |
21+ |
TO-220 |
23600 |
十年以上分销商原装进口件服务型企业0755-83790645 |
|||
恩XP |
25+ |
TO-220 |
20300 |
NXP/恩智浦原装特价BUK7535-55A即刻询购立享优惠#长期有货 |
|||
PHI |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
恩XP |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
PH |
24+ |
SOT78TO-220AB |
8866 |
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BUK75规格书下载地址
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BUK75数据表相关新闻
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2012-11-14
DdatasheetPDF页码索引
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