BUK75价格

参考价格:¥7.3361

型号:BUK7506-55A,127 品牌:NXP Semiconductors 备注:这里有BUK75多少钱,2024年最近7天走势,今日出价,今日竞价,BUK75批发/采购报价,BUK75行情走势销售排行榜,BUK75报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BUK75

N-channel TrenchMOS standard level FET

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nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Productavailability: BUK7504-40AinSOT78(TO-220AB);BUK7604-40AinSOT404(D2-PAK); BUK7E04-40AinSOT226(I2-PAK). Feature

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=40V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technologywhichfeaturesverylowon-stateresistance.Itisintendedforuseinautomotiveandgeneralpurposeswitchingapplications.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=30V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

TrenchMOS standard level FET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7506-55BinSOT78(TO-220AB) BUK7606-55BinSOT404(D2-PAK). Features ■Verylowon-stateresistan

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotiveTrenchMOS™technology. Productavailability: BUK7506-75BinSOT78(TO-220AB) BUK7606-75BinSOT404(D2-PAK). Features ■Verylowon-stateresistance. ■

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=75V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS standard level FET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=30V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7507-55BinSOT78(TO-220AB) BUK7607-55BinSOT404(D2-PAK). Features ■Verylow

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

N-channel TrenchMOS standard level FET

Generaldescription N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusing NXPHigh-PerformanceAutomotive(HPA)TrenchMOStechnology. Features ■Verylowon-stateresistance ■Q101compliant ■175°Crated ■Standardlevelcompatible Applications ■Automotive

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

TRENCHMOS-TM STANDARD LEVELl FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7508-40BinSOT78(TO-220AB) BUK7608-40BinSOT404(D2-PAK). Features ■Verylowon-s

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=40V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Standardlevelcompatible. Applications ■Automotivesystems ■

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Standardlevelcompatible. Applications ■Automotivesystems ■

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS standard level FET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=75V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

N-channel TrenchMOS standard level FET

Generaldescription N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsGeneral-PurposeAutomotive(GPA)TrenchMOS™technologyspecificallyoptimizedforlinearoperation. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Stableoperat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

N-channel TrenchMOS standard level FET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=75(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchin

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

TrenchMOS standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeavailableinTO220ABandSOT404.Using’trench’technologywhichfeaturesverylowon-stateresistance.Itisintendedforuseinautomotiveandgeneralpurposeswitchingapplication

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BUK75产品属性

  • 类型

    描述

  • 型号

    BUK75

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    N-channel TrenchMOS standard level FET

更新时间:2024-4-26 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP
2016+
TO-220
3900
只做原装,假一罚十,公司可开17%增值税发票!
ETROMTECH
23+
QFP
12000
全新原装假一赔十
NXP
2020+
TO220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NXP(恩智浦)
23+
标准封装
22048
全新原装正品/价格优惠/质量保障
Nexperia USA Inc.
23+
TO-220AB
30000
晶体管-分立半导体产品-原装正品
NXP(恩智浦)
23+
NA/
8735
原厂直销,现货供应,账期支持!
PH原装
98+
TO-220
105
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NXP/恩智浦
1948+
TO-220
6852
只做原装正品现货!或订货假一赔十!
Nexperia(安世)
23+
TO220AB3
6000
NPX/飞利浦
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!

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  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

BUK75数据表相关新闻