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BUK7513-75B价格
参考价格：￥4.5077
型号：BUK7513-75B,127 品牌：NXP 备注：这里有BUK7513-75B多少钱，2025年最近7天走势，今日出价，今日竞价，BUK7513-75B批发/采购报价，BUK7513-75B行情走势销售排行榜，BUK7513-75B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUK7513-75B | isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage : VDSS= 75(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchin | ISC 无锡固电 |   | |
BUK7513-75B | N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits | NEXPERIA 安世 | | |
BUK7513-75B | N-channel TrenchMOS standard level FET | NEXPERIA 安世 | | |
BUK7513-75B | TrenchMOS standard level FET | ETC 知名厂家 | ETC | |
N-channel TrenchMOS standard level FET 文件：196.15 Kbytes Page：14 Pages | Philips 飞利浦 | |
BUK7513-75B产品属性
- 类型
描述
- 型号
BUK7513-75B
- 功能描述
MOSFET HIGH PERF TRENCHMOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
25750 |
原装现货,当天可交货,原型号开票 |
|||
恩XP |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
25+ |
TO-220 |
3520 |
原装正品,假一罚十! |
|||
恩XP |
15+ |
TO-220 |
3950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
23+ |
TO-220 |
1 |
|||||
恩XP |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
PH |
24+ |
SOT78TO-220AB |
8866 |
||||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
恩XP |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
恩XP |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
BUK7513-75B规格书下载地址
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2019-3-23BUK204-50Y-TOPFET高侧开关SMD版BUK200-50Y
特点 * 垂直功率DMOS开关 * 低电阻状态5 V逻辑兼容输入 * 带滞后的过热保护，自我复位 * 输出过载短路保护负载电流限制;锁存 - 输入复位 * 高电源电压负载保护 * 电源欠压锁定 * 启动过载保护状态指示 * 诊断开路负载状态指示 * 极低的静态电流 * 关闭电感性负载的电压钳位 * 所有引脚的ESD保护 * 反向电池和过压保护 单片温度和过载保护的电源开关基于MOSFET技术在5引脚塑料表面贴装信封，作为一
2012-11-14
DdatasheetPDF页码索引
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