BS SMT DIT SWITCH

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PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

●High DC current gain ●Low collector-emitter saturation voltage ●Complementary types: BSS 79, BSS 81 (NPN)

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN)

PNP Silicon Switching Transistors

Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.

OptiMOS?? Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant

OptiMOS?? Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS2 Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS?? Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS??2Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant

PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

●High DC current gain ●Low collector-emitter saturation voltage ●Complementary types: BSS 79, BSS 81 (NPN)

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN)

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

PNP Silicon Switching Transistors

Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

●High DC current gain ●Low collector-emitter saturation voltage ●Complementary types: BSS 79, BSS 81 (NPN)

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN)

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

PNP Silicon Switching Transistors

Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

NPN Silicon Switching Transistors

• High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: BSS80, BSS82 (PNP)

NPN Silicon Switching Transistors

Features • High DC current gain: 0.1mA to 500 mA. • Low collector-emitter saturation voltage.

OptiMOS?? Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

N-Channel Enhancement Mode MOSFET

Application i + Load/Power Switching | + Interfacing Switching | * Logic Level Shift |

NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

● High DC current gain ● Low collector-emitter saturation voltage ● Complementary types: BSS 80, BSS 82 (PNP)

NPN Silicon Switching Transistors

• High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: BSS80, BSS82 (PNP)

NPN Silicon Switching Transistors

Features • High DC current gain: 0.1mA to 500 mA. • Low collector-emitter saturation voltage.

NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

● High DC current gain ● Low collector-emitter saturation voltage ● Complementary types: BSS 80, BSS 82 (PNP)

NPN Silicon Switching Transistors

• High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: BSS80, BSS82 (PNP)

NPN Silicon Switching Transistors

Features • High DC current gain: 0.1mA to 500 mA. • Low collector-emitter saturation voltage.

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN)

PNP Silicon Switching Transistors

Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.

PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

●High DC current gain ●Low collector-emitter saturation voltage ●Complementary types: BSS 79, BSS 81 (NPN)

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN)

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS - BSS82B - CL BSS82C - CM

PNP Silicon Switching Transistors

Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS - BSS82B - CL BSS82C - CM

PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

●High DC current gain ●Low collector-emitter saturation voltage ●Complementary types: BSS 79, BSS 81 (NPN)

PNP Silicon Switching Transistors

Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.

PNP Silicon Switching Transistors

High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN)

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS - BSS82B - CL BSS82C - CM

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS - BSS82B - CL BSS82C - CM

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated

MOSFET N-channel enhancement switching transistor

MOSFET N-channel enhancement switching transistor

DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated b

MOSFET N-channel enhancement switching transistor

DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-t

RF Manual 16th edition

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated

1.7Q ,60V P-Channel MOSFET

Vdss=60V ID= 0.5A Rps(oNn)=1.7Q@VGs=-10V

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package. FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed a

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Feature ● -50V, -0.13A, RDS(ON) =10Ω @VGS = -10V ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

Small Signal MOSFET P-Channel

Features: * Low On-Resistance : 10Ω * Low Input Capacitance: 30PF * Low Out put Capacitance : 10PF * Low Threshole : 2.0V * Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

P-CHANNEL ENHANCEMENT MODE MOSFET

This is a P-channel, enhancement-mode MOSFET, housed in the industry standard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. FEATURES Low On-Resistance Available in lead-free plating (100 matte tin finish) Low Gate Threshold Voltage

P-channel enhancement mode vertical DMOS transistor

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

SOT-23 Field Effect Transistors

SOT-23 Field Effect Transistors P-Channel Enhancement-Mode MOS FETs

Energy Efficient

SOT-23 Plastic-Encapsulate MOSFETs DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE ● Energy Efficient ● Low Threshold Voltage ● High-speed Switching ● Miniature Surface Mount P