Small Signal MOSFET P-Channel

Features: * Low On-Resistance : 10Ω * Low Input Capacitance: 30PF * Low Out put Capacitance : 10PF * Low Threshole : 2.0V * Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

P-CHANNEL ENHANCEMENT MODE MOSFET

This is a P-channel, enhancement-mode MOSFET, housed in the industry standard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. FEATURES Low On-Resistance Available in lead-free plating (100 matte tin finish) Low Gate Threshold Voltage

P-channel enhancement mode vertical DMOS transistor

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

SOT-23 Field Effect Transistors

SOT-23 Field Effect Transistors P-Channel Enhancement-Mode MOS FETs

Energy Efficient

SOT-23 Plastic-Encapsulate MOSFETs DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE ● Energy Efficient ● Low Threshold Voltage ● High-speed Switching ● Miniature Surface Mount P

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package. FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed a

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Feature ● -50V, -0.13A, RDS(ON) =10Ω @VGS = -10V ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

P-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS -60 V ● ID -0.17 A ● RDS(ON)( at VGS=-10V)

P-Channel Enhancement Mode Field Effect Transistor

Features • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: B84 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

P-CHANNEL MOSFET

P-CHANNEL MOSFET DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE ● Energy Efficient ● Low Threshold Voltage ● High-speed Switching ● Miniature Surface Mount Package Saves Board

P-Channel Mosfet

Product Summary • Vos -50V • lo -0.13A • RDS(ON)(at VGS=-10V)

P-channel enhancement mode vertical DMOS transistor

1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. [1] /DG: halogen-free 1.2 Features 1.3 Applications Table 1. Product overview Type number[1] Package NXP JEDEC BSS84 S

P-Channel Enhancement Mode MOSFET

■ Features ● VDS (V) = -50V ● ID = -0.13 A ● RDS(ON) ≤ 10Ω (VGS = -5V)

P-Channel MOSFET

Features Energy efficient Low threshold voltage High-speed switching Miniature surface mount package saves board space ESD protected(HBM) up to 2KV

P-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

MOSFET(P-Channel)

Features Energy Efficient Low Threshold Voltage High-speed Switching. DC/DC Converter.

Plastic-Encapsulate MOSFETS

DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE Energy Efficient Low Threshold Voltage High-speed Switching Miniature Surface Mount Package Saves Board Space APPLICATI

P-Channel 20-V (D-S) MOSFET

Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

P-Channel Enhancement Mode MOSFET

Feature ● -50V/-0.13A, RDS(ON) =10Ω (MAX) @VGS = -5V, Ids=-0.1A ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applications ● Power Management Portable Equipment and Battery Powered Systems.

P-Channel Enhancement Mode MOSFET

Feature ● -60V/-0.13A, RDS(ON) = ≤ 6Ω (MAX) @VGS = -10V ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package ● ESD protection

P-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions P-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low threshold voltage, Direct interface to C-MOS, TTL etc, High-speed switching. Applications Line current interrupter in telephone sets, Relay, High speed and line transformer drivers.

P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement Mode Power MOSFET These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered produc

P-Channel Enhancement Mode MOSFET

■ Features ● VDS (V) = -50V ● ID = -0.13 A ● RDS(ON) ≤ 10Ω (VGS = -5V)

P-Channel Enhancement Mode Field-Effect Transistor

文件：196.17 Kbytes Page：7 Pages

P-Channel Enhancement Mode Field-Effect Transistor

文件：247.79 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：103.58 Kbytes Page：3 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：289.1 Kbytes Page：6 Pages

包装：管件 描述：P-CHANNEL ENHANCEMENT MODE MOSFE 分立半导体产品 晶体管 - FET，MOSFET - 单个

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

P沟道增强型场效应晶体管-50V，-0.13A，10Ω

P-CHANNEL ENHANCEMENT MODE MOSFET

P-channel enhancement mode vertical DMOS transistor

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capaci

Complementary Pair Enhancement Mode Field Effect Transistor

FEATURES • Low On-Resistance. • Low Gate Threshold Voltage. • Low Input Capacitance. • Fast Switching Speed. • Low Input/Output Leakage. • Complementary Pair.

Complementary Pair Enhancement Mode Field Effect Transistor

FEATURES • Low On-Resistance. • Low Gate Threshold Voltage. • Low Input Capacitance. • Fast Switching Speed. • Low Input/Output Leakage. • Complementary Pair.

NP-Channel Enhancement Mode MOSFET

Features Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Halogen free

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capaci

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

50 V, 180 mA P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD

P-Channel Mosfet

Application « Battery protection « Load switch « Power management

P-Channel Power MOSFET

Application Reverse Battery protection » Load switch o Power management PWM Application