丝印代码：SP；P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

丝印代码：SP；P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package. FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed a

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Feature ● -50V, -0.13A, RDS(ON) =10Ω @VGS = -10V ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

丝印代码：C84；P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

丝印代码：C84；P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

P-Channel Enhancement Mode Field Effect Transistor

Features • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: B84 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

P-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

Small Signal MOSFET P-Channel

Features: * Low On-Resistance : 10Ω * Low Input Capacitance: 30PF * Low Out put Capacitance : 10PF * Low Threshole : 2.0V * Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

丝印代码：13*；P-channel enhancement mode vertical DMOS transistor

SOT-23 Field Effect Transistors

SOT-23 Field Effect Transistors P-Channel Enhancement-Mode MOS FETs

P-CHANNEL MOSFET

P-CHANNEL MOSFET DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE ● Energy Efficient ● Low Threshold Voltage ● High-speed Switching ● Miniature Surface Mount Package Saves Board

丝印代码：W；P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement Mode Power MOSFET These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered produc

P-CHANNEL ENHANCEMENT MODE MOSFET

This is a P-channel, enhancement-mode MOSFET, housed in the industry standard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. FEATURES Low On-Resistance Available in lead-free plating (100 matte tin finish) Low Gate Threshold Voltage

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

丝印代码：B84；MOSFET(P-Channel)

Features Energy Efficient Low Threshold Voltage High-speed Switching. DC/DC Converter.

P-Channel Enhancement Mode MOSFET

■ Features ● VDS (V) = -50V ● ID = -0.13 A ● RDS(ON) ≤ 10Ω (VGS = -5V)

丝印代码：B84；P-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS -60 V ● ID -0.17 A ● RDS(ON)( at VGS=-10V)

Energy Efficient

SOT-23 Plastic-Encapsulate MOSFETs DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE ● Energy Efficient ● Low Threshold Voltage ● High-speed Switching ● Miniature Surface Mount P

MOSFET(P-Channel)

Features Energy Efficient Low Threshold Voltage High-speed Switching. DC/DC Converter.

P-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions P-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low threshold voltage, Direct interface to C-MOS, TTL etc, High-speed switching. Applications Line current interrupter in telephone sets, Relay, High speed and line transformer drivers.

P-Channel Enhancement Mode MOSFET

Feature ● -60V/-0.13A, RDS(ON) = ≤ 6Ω (MAX) @VGS = -10V ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package ● ESD protection

P-Channel Enhancement Mode MOSFET

Feature ● -50V/-0.13A, RDS(ON) =10Ω (MAX) @VGS = -5V, Ids=-0.1A ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applications ● Power Management Portable Equipment and Battery Powered Systems.

丝印代码：13；P-channel enhancement mode vertical DMOS transistor

1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. [1] /DG: halogen-free 1.2 Features 1.3 Applications Table 1. Product overview Type number[1] Package NXP JEDEC BSS84 S

丝印代码：B84；Plastic-Encapsulate MOSFETS

DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE Energy Efficient Low Threshold Voltage High-speed Switching Miniature Surface Mount Package Saves Board Space APPLICATI

丝印代码：P.DY；P-Channel Enhancement Mode MOSFET

■ Features ● VDS (V) = -50V ● ID = -0.13 A ● RDS(ON) ≤ 10Ω (VGS = -5V)

P-Channel Mosfet

Product Summary • Vos -50V • lo -0.13A • RDS(ON)(at VGS=-10V)

P-Channel 20-V (D-S) MOSFET

Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

P-Channel MOSFET

Features Energy efficient Low threshold voltage High-speed switching Miniature surface mount package saves board space ESD protected(HBM) up to 2KV

P沟道增强型场效应晶体管-50V，-0.13A，10Ω

该 P 沟道增强模式场效应晶体管采用飞兆专有的高单元密度 DMOS 技术生产。 这一密度非常高的工艺可最大限度地降低通态电阻，从而提供稳固和可靠的性能以及快速开关。 BSS84 在要求直流电流达 0.13 A 的多数应用中可轻松使用，并且可提供高达 0.52A 的电流。该产品特别适合需要低电流高端开关的低电压应用。 •BSS84：-0.13 A，-50 V。 RDS(ON) = 10 Ω （VGS = -5 V 时）\n•电压控制 P 沟道小信号开关\n•高密度单元设计，实现低 RDS(ON)\n•高饱和电流。;

P-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

包装：管件 描述：P-CHANNEL ENHANCEMENT MODE MOSFE 分立半导体产品 晶体管 - FET，MOSFET - 单个

P-CHANNEL ENHANCEMENT MODE MOSFET

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丝印代码：C84；P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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P-Channel Enhancement Mode Field-Effect Transistor

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丝印代码：SP；P-Channel Enhancement Mode Field-Effect Transistor

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丝印代码：ZV-*；P-channel enhancement mode vertical DMOS transistor

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capaci

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

丝印代码：KNP；Complementary Pair Enhancement Mode Field Effect Transistor

FEATURES • Low On-Resistance. • Low Gate Threshold Voltage. • Low Input Capacitance. • Fast Switching Speed. • Low Input/Output Leakage. • Complementary Pair.

丝印代码：KNP；Complementary Pair Enhancement Mode Field Effect Transistor

FEATURES • Low On-Resistance. • Low Gate Threshold Voltage. • Low Input Capacitance. • Fast Switching Speed. • Low Input/Output Leakage. • Complementary Pair.

丝印代码：402；NP-Channel Enhancement Mode MOSFET

Features Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Halogen free

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capaci

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

丝印代码：NPK；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

丝印代码：NPK；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • Green Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability

丝印代码：B84；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Energy Efficient Low Threshold Voltage High-speed Switching Miniature Surface Mount Package Saves Board Space AEC-Q101qualified APPLICATION DC−DC converters,load switching, power management in portable and battery−powered products such as computers, printers, cellular and

P-Channel Mosfet

Application « Battery protection « Load switch « Power management