OptiMOS?? Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant

OptiMOS?? Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

丝印代码：YEs；OptiMOS2 Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

Small Signal MOSFET

所有的小型单个 n 通道系列产品均适合汽车应用（2N7002 除外）。 • 增强模式\n• 无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n /* Style Definitions */ table.MsoNormalTable{mso-style-name:\"Table Normal\";mso-style-parent:\"\";line-height:115%;font-size:11.0pt;\"Calibri\",\"sans-serif\";mso-fareast-\"Times New Roman\";}\n优势:;

采用 SOT-23 封装的 N 沟道小信号 MOSFET 20 V

所有的小型单个 n 通道系列产品均适合汽车应用（2N7002 除外）。 • 增强模式\n• 无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n /* Style Definitions */ table.MsoNormalTable{mso-style-name:\"Table Normal\";mso-style-parent:\"\";line-height:115%;font-size:11.0pt;\"Calibri\",\"sans-serif\";mso-fareast-\"Times New Roman\";}\n优势:;

OptiMOS?? Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS??2Small-Signal-Transistor

Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant

POWER TRANSISTORS(8.0A,150-200V,60W)

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)