丝印代码：STs；SIPMOS Small-Signal-Transistor

Features • N-channel • Depletion mode • dv/dtrated • Available with VGS(th)indicator on reel • Pb-free lead-plating; RoHS compliant

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

●VDS 250V ●ID 0.04A ●RDS(on) 100Ω ●N channel ●Depletion mode ●High dynamic resistance ●Available grouped inVGS(th)

丝印代码：J2.X；N-Channel Enhancement Mode MOSFET

Features © Lowonesistance © N-Channel MOSFET © Lowinput capacitance © Fast switching speed © ESD Protection

Small Signal MOSFET

英飞凌是少数向全球提供耗尽型 MOSFET 半导体制造商之一。\n 应用范围包括供电电源启动电源、过压保护、涌入电流限制器、脱机基准电压。使用单一部件就可能实现简单的电流调节。所有产品均适用于汽车应用。为满足特殊要求，可在卷轴上使用带有 VGS(th) 指示器的耗尽型 MOSFET。 • 耗尽型\n• dv/dt额定\n• 可在卷轴上使用 VGS(th) 指示器\n• 无卤；无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n\n优势:;

丝印代码：STs；SIPMOS Small-Signal-Transistor

文件：667.32 Kbytes Page：9 Pages

POWER MOSFET N-CHANNEL 200mA, 50V

DESCRIPTION Typical applications are DC DC converters, power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. The BSS 139D is available in SC 88 p ackage FEATURES  L ow Threshol d Voltage (V GS(th) th): 0.

采用 SOT-23-3 封装的适用于工业和消费应用的 N 沟道耗尽型小信号晶体管

\n优势:\n• PCB-space and cost savings\n• Gate drive flexibility\n• Reduced design complexity\n• Environmentally friendly\n• High overall efficiency\n• Enables robust design\n• Industry standard qualification level;

丝印代码：J2；Plastic-Encapsulate MOSFETS

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● Low threshold voltage (VGS(th): 0.5V 1.5V) makes it ideal for low voltage applications.

N-Channel Enhancement Mode MOSFET

Features • ESD Protected

POWER MOSFET N-CHANNEL 200mA, 50V

DESCRIPTION Typical applications are DC DC converters, power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. The BSS 139W is available in SC 70 p ackage FEATURES  L ow Threshol d Voltage (V GS(th) th): 0.5

SIPMOS Small-Signal-Transistor

文件：667.32 Kbytes Page：9 Pages

丝印代码：TIs；Small-Signal Transistor

文件：1.55661 Mbytes Page：10 Pages

MOSFET

0.2A, 50V N-CHANNEL POWER MOSFET

文件：137.01 Kbytes Page：3 Pages

0.2A, 50V N-CHANNEL POWER MOSFET

文件：137.01 Kbytes Page：3 Pages

0.2A, 50V N-CHANNEL POWER MOSFET

文件：137.01 Kbytes Page：3 Pages

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

Low Power Low Offset Voltage Quad Comparators

文件：465.36 Kbytes Page：19 Pages

Low Power Low Offset Voltage Quad Comparators

文件：465.36 Kbytes Page：19 Pages

Low Power Low Offset Voltage Quad Comparators

文件：465.36 Kbytes Page：19 Pages