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BSS139K

丝印代码:J2;Plastic-Encapsulate MOSFETS

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● Low threshold voltage (VGS(th): 0.5V 1.5V) makes it ideal for low voltage applications.

GWSEMI

唯圣电子

BSS139K

MOSFET

JESTEK

江智科技

N-Channel Enhancement Mode MOSFET

Features • ESD Protected

HUIXIN

慧芯电子

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

MOTOROLA

摩托罗拉

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

Low Power Low Offset Voltage Quad Comparators

文件:465.36 Kbytes Page:19 Pages

NSC

国半

Low Power Low Offset Voltage Quad Comparators

文件:465.36 Kbytes Page:19 Pages

NSC

国半

Low Power Low Offset Voltage Quad Comparators

文件:465.36 Kbytes Page:19 Pages

NSC

国半

BSS139K产品属性

  • 类型

    描述

  • Package:

    SOT-23

  • BVDSS:

    60

  • Vth(V):

    1

  • Rdson(mR)Typ@VGS=10V:

    1500

  • ID(A)Tc=25℃:

    0.22

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