采用 SOT-23-3 封装的适用于工业和消费应用的 N 沟道耗尽型小信号晶体管

\n优势:\n• PCB-space and cost savings\n• Gate drive flexibility\n• Reduced design complexity\n• Environmentally friendly\n• High overall efficiency\n• Enables robust design\n• Industry standard qualification level;

丝印代码：TIs；Small-Signal Transistor

文件：1.55661 Mbytes Page：10 Pages

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

Low Power Low Offset Voltage Quad Comparators

文件：465.36 Kbytes Page：19 Pages

Low Power Low Offset Voltage Quad Comparators

文件：465.36 Kbytes Page：19 Pages

Low Power Low Offset Voltage Quad Comparators

文件：465.36 Kbytes Page：19 Pages