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型号 功能描述 生产厂家 企业 LOGO 操作
BSS139W

POWER MOSFET N-CHANNEL 200mA, 50V

DESCRIPTION Typical applications are DC DC converters, power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. The BSS 139W is available in SC 70 p ackage FEATURES  L ow Threshol d Voltage (V GS(th) th): 0.5

AITSEMI

创瑞科技

BSS139W

FET

AITSEMI

创瑞科技

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

MOTOROLA

摩托罗拉

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

Low Power Low Offset Voltage Quad Comparators

文件:465.36 Kbytes Page:19 Pages

NSC

国半

Low Power Low Offset Voltage Quad Comparators

文件:465.36 Kbytes Page:19 Pages

NSC

国半

Low Power Low Offset Voltage Quad Comparators

文件:465.36 Kbytes Page:19 Pages

NSC

国半

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