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位置：首页 > IC中文资料第815页 > BD139

BD139晶体管资料

  • BD139(-6...-10)别名：BD139(-6...-10)三极管、BD139(-6...-10)晶体管、BD139(-6...-10)晶体三极管

  • BD139(-6...-10)生产厂家：德国AEG公司_德国椤茨标准电器公司_荷兰飞利浦公司

  • BD139(-6...-10)制作材料：Si-NPN

  • BD139(-6...-10)性质：低频或音频放大 （LF）_功率放大 （L）

  • BD139(-6...-10)封装形式：直插封装

  • BD139(-6...-10)极限工作电压：80V

  • BD139(-6...-10)最大电流允许值：1.5A

  • BD139(-6...-10)最大工作频率：<1MHZ或未知

  • BD139(-6...-10)引脚数：3

  • BD139(-6...-10)最大耗散功率：12.5W

  • BD139(-6...-10)放大倍数：

  • BD139(-6...-10)图片代号：B-21

  • BD139(-6...-10)vtest：80

  • BD139(-6...-10)htest：999900

  • BD139(-6...-10)atest：1.5

  • BD139(-6...-10)wtest：12.5

  • BD139(-6...-10)代换 BD139(-6...-10)用什么型号代替：BD169,BD179,BD230,BD237,BD441,3DA1C,

BD139价格

参考价格：￥0.3776

型号：BD139 品牌：STMICROELECTRONICS 备注：这里有BD139多少钱，2024年最近7天走势，今日出价，今日竞价，BD139批发/采购报价，BD139行情走势销售排行榜，BD139报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BD139

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD135,137,139arecomplementarywithBD136,138,140

MotorolaMotorola, Inc

摩托罗拉

Motorola
BD139

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BD139

NPNSILICONTRANSISTORS

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENS

Siemens Ltd

SIEMENS
BD139

MediumPowerLinearandSwitchingApplications

Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD139

NPNPOWERTRANSISTORS

NPNPOWERTRANSISTORS FEATURES *Highcurrent(max.1.5A) *Lowvoltage(max.80V)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BD139

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD139

ComplementarySiliconPowerTtransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS
BD139

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD139

PowerTransistorsNPNSilicon45,60,80Volts

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=150mAdc •ComplementarywithBD136,BD138,BD140

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BD139

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBD135,BD137,andBD139areNPNSiliconEpitaxialPlanarTransistorsdesignedforaudioamplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central
BD139

Complementarylowvoltagetransistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BD139

SILICONPLANAREPITAXIALPOWERTRANSISTORS

SILICONPLANAREPITAXIALPOWERTRANSISTORS. TheBD136-BD138-BD140arePNPTransistors Theyarerecommendedfordriverstagesinhi-fiamplifiersandtelevisioncircuits. TheyaremountedinJedecTO-126plasticpackage. NPNcomplementsareBD135-BD137-BD139. CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
BD139

HighCurrent

TRANSISTOR(NPN) FEATURES •HighCurrent(1.5A) •LowVoltage(80V)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BD139

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BD139

NPNEPITAXIALSILICONPOWERTRANSISTORS

NPNEPITAXIALSILICONPOWERTRANSISTORS DesignedforuseasAudioAmplifierandDriversUtilizing ComplementaryBD136,BD138,BD140

CDIL

CDIL

CDIL
BD139

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
BD139

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ◾HighCurrent(1.5A) ◾LowVoltage(80V)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
BD139

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●HighCurrent

FS

First Silicon Co., Ltd

FS
BD139

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BD139

SiliconNPNPowerTransistor

文件：192.16 Kbytes Page：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BD139

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 80V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD139

SiliconNPNtransistorinaTO-126FPlasticPackage.

文件：814.21 Kbytes Page：6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BD139

SiliconNPNPowerTransistors

文件：111.81 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BD139

EPITAXIALPLANARNPNTRANSISTOR

文件：36.88 Kbytes Page：2 Pages

KECKEC CORPORATION

KEC株式会社

KEC
BD139

NPNPOWERTRANSISTORS

文件：105.21 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BD139

Complementarylowvoltagetransistor

文件：157.51 Kbytes Page：9 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139

NPNSILICONTRANSISTORS

文件：76.42 Kbytes Page：4 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139-10

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENS

Siemens Ltd

SIEMENS
BD139-10

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BD139-10

PowerTransistorsNPNSilicon45,60,80Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BD139-10

NPNPlasticEncapsulatedTransistor

FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD139-10

Complementarylowvoltagetransistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139-10

Complementarylowvoltagetransistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD13910S

NPNEpitaxialSiliconTransistor

Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD13910STU

NPNEpitaxialSiliconTransistor

Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD139-16

PowerTransistorsNPNSilicon45,60,80Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BD139-16

Complementarylowvoltagetransistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139-16

NPNPlasticEncapsulatedTransistor

FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD139-16

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BD139-16

Complementarylowvoltagetransistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD13916S

NPNEpitaxialSiliconTransistor

Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD13916STU

NPNEpitaxialSiliconTransistor

Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD139-6

NPNPlasticEncapsulatedTransistor

FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BD139-6

PowerTransistorsNPNSilicon45,60,80Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BD139-6

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENS

Siemens Ltd

SIEMENS
BD1396STU

NPNEpitaxialSiliconTransistor

Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD139G

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD139T

NPNSiliconEpitaxialPowerTransistor

NPNSILICONEPITAXIALPOWERTRANSISTOR ThesedevicesaredesignedasAudioAmplifier andDriversUtilizing.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
BD139-TU

TO-126Plastic-EncapsulateTransistors

FEATURES HighCurrent ComplementToBD136,BD138AndBD140

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BD139_09

NPNPOWERTRANSISTORS

文件：105.21 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BD139_13

NPNEpitaxialSiliconTransistor

文件：142.43 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD139_17

iscSiliconNPNPowerTransistor

文件：255 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD139-10

NPNSILICONTRANSISTORS

文件：76.42 Kbytes Page：4 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD139-10

Complementarylowvoltagetransistor

文件：157.51 Kbytes Page：9 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
BD13910S

NPNEpitaxialSiliconTransistor

文件：142.43 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD13910S

NPNEpitaxialSiliconTransistor

文件：142.43 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD13910STU

NPNEpitaxialSiliconTransistor

文件：142.43 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

BD139产品属性

  • 类型

    描述

  • 型号

    BD139

  • 功能描述

    两极晶体管 - BJT NPN Audio Amplifier

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

BD139供应商更多...

更新时间：2024-4-26 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
BD139-25
BR
2016+
TO126
4000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市高捷芯城科技有限公司
BD139-16
ST(意法半导体)
23+
SOT-32
942
原厂订货渠道,支持BOM配单一站式服务
询价
中天科工半导体（深圳）有限公司
BD139G
onsemi
23+
TO-225AA,TO-126-3
30000
晶体管-分立半导体产品-原装正品
询价
深圳市跃创芯科技有限公司
BD13916STU
Onsemi
23+
TO-126
5162
只做原装正品,假一罚十。
询价
深圳市柏芯特电子科技有限公司
BD139
ST/意法半导体
2023
SOT-32-3
6000
公司原装现货/支持实单
询价
深圳市星宇佳科技有限公司
BD139-16
STM
22+/23+
SOT-32-3 (TO-126-3)
1000
询价
深圳市鑫宇杨电子科技有限公司
BD139
ST
2020+
TO-126
35000
100%进口原装正品公司现货库存
询价
深圳市莱克讯科技有限公司
BD139
ST
2017+
TO-126
45896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
千层芯半导体(深圳)有限公司
BD139
STM
17+
原厂原封
224700
只做原装
询价
深圳市豪迈兴电子有限公司
BD139
STM
2339+
N/A
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价

BD139芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

BD139规格书下载地址

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