BD139晶体管资料

  • BD139(-6...-10)别名:BD139(-6...-10)三极管、BD139(-6...-10)晶体管、BD139(-6...-10)晶体三极管

  • BD139(-6...-10)生产厂家:德国AEG公司_德国椤茨标准电器公司_荷兰飞利浦公司

  • BD139(-6...-10)制作材料:Si-NPN

  • BD139(-6...-10)性质:低频或音频放大 (LF)_功率放大 (L)

  • BD139(-6...-10)封装形式:直插封装

  • BD139(-6...-10)极限工作电压:80V

  • BD139(-6...-10)最大电流允许值:1.5A

  • BD139(-6...-10)最大工作频率:<1MHZ或未知

  • BD139(-6...-10)引脚数:3

  • BD139(-6...-10)最大耗散功率:12.5W

  • BD139(-6...-10)放大倍数

  • BD139(-6...-10)图片代号:B-21

  • BD139(-6...-10)vtest:80

  • BD139(-6...-10)htest:999900

  • BD139(-6...-10)atest:1.5

  • BD139(-6...-10)wtest:12.5

  • BD139(-6...-10)代换 BD139(-6...-10)用什么型号代替:BD169,BD179,BD230,BD237,BD441,3DA1C,

BD139价格

参考价格:¥0.3776

型号:BD139 品牌:STMICROELECTRONICS 备注:这里有BD139多少钱,2025年最近7天走势,今日出价,今日竞价,BD139批发/采购报价,BD139行情走势销售排行榜,BD139报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BD139

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

Motorola

摩托罗拉

BD139

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Philips

飞利浦

BD139

NPN SILICON TRANSISTORS

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

STMICROELECTRONICS

意法半导体

BD139

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

SIEMENS

西门子

BD139

Medium Power Linear and Switching Applications

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BD139

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.80V)

UTC

友顺

BD139

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @

ONSEMI

安森美半导体

BD139

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

TGS

BD139

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type BD136/138/140 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

ISC

无锡固电

BD139

Power Transistors NPN Silicon 45,60,80 Volts

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC = 150mAdc • Complementary with BD136, BD138, BD140

MCC

美微科

BD139

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER

Central

BD139

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

STMICROELECTRONICS

意法半导体

BD139

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

JIANGSU

长电科技

BD139

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD136-BD138-BD140 are PNP Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139. Compliance to RoHS.

COMSET

BD139

High Current

TRANSISTOR (NPN) FEATURES • High Current(1.5A) • Low Voltage(80V)

DGNJDZ

南晶电子

BD139

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

JIANGSU

长电科技

BD139

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140

CDIL

BD139

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

BD139

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ◾ High Current(1.5A) ◾ Low Voltage(80V)

KOOCHIN

BD139

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High Current

FS

BD139

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

BD139

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

STMICROELECTRONICS

意法半导体

BD139

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

DGNJDZ

南晶电子

BD139

SILICON NPN EPITAXIAL TYPE

FEATURES: . Designed for Complementary Use with BD136, BD138 and BD140.

TOSHIBA

东芝

BD139

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

MULTICOMP

易络盟

BD139

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 80V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BD139

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BD139

GERMANIOVE TRANZISTORY

文件:1.9422 Mbytes Page:14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BD139

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BD139

Silicon NPN Power Transistor

文件:192.16 Kbytes Page:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD139

Silicon NPN transistor in a TO-126F Plastic Package.

文件:814.21 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

BD139

Silicon NPN Power Transistors

文件:111.81 Kbytes Page:3 Pages

SAVANTIC

BD139

EPITAXIAL PLANAR NPN TRANSISTOR

文件:36.88 Kbytes Page:2 Pages

KECKEC CORPORATION

KEC株式会社

BD139

NPN POWER TRANSISTORS

文件:105.21 Kbytes Page:3 Pages

UTC

友顺

BD139

Complementary low voltage transistor

文件:157.51 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

BD139

NPN SILICON TRANSISTORS

文件:76.42 Kbytes Page:4 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

SIEMENS

西门子

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Philips

飞利浦

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

MCC

美微科

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

STMICROELECTRONICS

意法半导体

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

STMICROELECTRONICS

意法半导体

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

STMICROELECTRONICS

意法半导体

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Philips

飞利浦

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

STMICROELECTRONICS

意法半导体

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

MCC

美微科

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

MULTICOMP

易络盟

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

MCC

美微科

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

SIEMENS

西门子

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN POWER TRANSISTORS

 FEATURES High current (max.1.5A) Low voltage (max.80V)

UTC

友顺

BD139产品属性

  • 类型

    描述

  • 型号

    BD139

  • 功能描述

    两极晶体管 - BJT NPN Audio Amplifier

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-7 17:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
STM
22+/23+
SOT-32-3 (TO-126-3)
1000
PHIL
23+
16387
STM
24+
N/A
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
BR
2016+
TO126
4000
只做原装,假一罚十,公司可开17%增值税发票!
STM
24+
原厂原封
224700
只做原装
恩XP
24+
TO-126
505103
免费送样原盒原包现货一手渠道联系
15800
24+
TO-126
6980
原装现货,可开13%税票
ST(意法)
24+
N/A
7212
原厂可订货,技术支持,直接渠道。可签保供合同
IR
23+
DO-214
20000

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