0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

SIPMOS짰 Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • n-channel • enhancement mode • Logic level • dv /dt rated • Pb-free lead plating, RoHS compliant

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features • Low Input Capacitance • High BVDSS Rating for Power Application • Low Input/Output Leakage • To

丝印代码：B127；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. • RDS(ON)=310Ω @ VGS=10V, ID=0.016A \n• Ultra Low Gate Charge (Typical 140nC) \n• Ultra High Switching Speed;

Small Signal MOSFET

所有的小型单个 n 通道系列产品均适合汽车应用（2N7002 除外）。 • 增强模式\n• 无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n /* Style Definitions */ table.MsoNormalTable{mso-style-name:\"Table Normal\";mso-style-parent:\"\";line-height:115%;font-size:11.0pt;\"Calibri\",\"sans-serif\";mso-fareast-\"Times New Roman\";}\n优势:;

小信号MOS管

丝印代码：B127；N-Channel Enhancement Mode Power MOSFET

文件：300.28 Kbytes Page：6 Pages

SIPMOS Small-Signal-Transistor

文件：253.71 Kbytes Page：9 Pages

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features • Low Input Capacitance • High BVDSS Rating for Power Application • Low Input/Output Leakage • To

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features • Low Input Capacitance • High BVDSS Rating for Power Application • Low Input/Output Leakage • To

SIPMOS Small-Signal-Transistor

文件：253.71 Kbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：314.62 Kbytes Page：6 Pages

丝印代码：IIs；Small-Signal Transistor

文件：1.56321 Mbytes Page：10 Pages

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：314.62 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：314.62 Kbytes Page：6 Pages

N-Channel Enhancement Mode Power MOSFET

文件：300.28 Kbytes Page：6 Pages

PLASTIC SILICON RECTIFIER(VOLTAGE - 1250 to 1600 Volts CURRENT - 1.0 Ampere)

PLASTIC SILICON RECTIFIERS VOLTAGE 1250 to 1600 Volts CURRENT 1.0 Ampere FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon epitaxial planar type

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