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BSP32晶体管资料
BSP32别名：BSP32三极管、BSP32晶体管、BSP32晶体三极管
BSP32生产厂家：
BSP32制作材料：Si-PNP
BSP32性质：表面帖装型 （SMD）_低频或音频放大 （LF）_开关管
BSP32封装形式：贴片封装
BSP32极限工作电压：90V
BSP32最大电流允许值：1A
BSP32最大工作频率：<1MHZ或未知
BSP32引脚数：3
BSP32最大耗散功率：1.5W
BSP32放大倍数：β>40
BSP32图片代号：H-99
BSP32vtest：90
BSP32htest：999900
- BSP32atest：1
BSP32wtest：1.5
BSP32代换 BSP32用什么型号代替：
BSP32价格
参考价格：￥1.1374
型号：BSP32,115 品牌：NXP 备注：这里有BSP32多少钱，2025年最近7天走势，今日出价，今日竞价，BSP32批发/采购报价，BSP32行情走势销售排行榜，BSP32报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSP32 | PNP medium power transistors DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications. | Philips 飞利浦 |   | |
BSP32 | MEDIUM POWER AMPLIFIER MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■ NPN COMPLEMENTS ARE BSP40, BSP41, B | STMICROELECTRONICS 意法半导体 | | |
BSP32 | Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | | |
BSP32 | PNP medium power transistors FEATURES •High current (max. 1 A) •Low voltage (max. 80 V). APPLICATIONS •Telephony and general industrial applications. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BSP32 | 80 V, 1 A PNP medium power transistor | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V | SIEMENS 西门子 | | ||
SIPMOS Small-Signal-Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated | Infineon 英飞凌 | | ||
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V | SIEMENS 西门子 | | ||
SIPMOS Small-Signal-Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
P-Channel Enhancement Mode Power MOSFET Application Load/Power Switching Interfacing Switching Logic Level Shift | TECHPUBLIC 台舟电子 | | ||
SIPMOS Small-Signal Transistor (N channel Enhancement mode) SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V | SIEMENS 西门子 | | ||
SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 | Infineon 英飞凌 | | ||
SIPMOS??Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 | Infineon 英飞凌 | | ||
封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
采用 SOT-223 封装的 N 沟道小信号 MOSFET 60 V | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor 文件：460.75 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor 文件：460.75 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor 文件：285.46 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
P沟道增强模式场效应晶体管 (FET)，-100 V，SOT-223 | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor 文件：285.46 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor 文件：281.32 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Small-Signal-Transistor 文件：281.32 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor 文件：544.94 Kbytes Page：8 Pages | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor 文件：544.94 Kbytes Page：8 Pages | Infineon 英飞凌 | |
BSP32产品属性
- 类型
描述
- 型号
BSP32
- 功能描述
两极晶体管 - BJT TRANS MED PWR TAPE-7
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
N/A |
10000 |
原装优质现货订货渠道商 |
|||
INFINEON/英飞凌 |
23+ |
SOT223 |
12000 |
只做原装假一罚十 |
|||
NEXPERIA/安世 |
24+ |
SOT223 |
503251 |
免费送样原盒原包现货一手渠道联系 |
|||
INFINEON/英飞凌 |
24+ |
SOT-223 |
16000 |
只做原厂渠道 可追溯货源 |
|||
INFINEON |
24+ |
SOT223 |
15000 |
||||
INF |
24+ |
SOT-223 |
65000 |
一级代理/全新现货/长期供应! |
|||
INFINEON |
2025+ |
SOT-223 |
32560 |
原装优势绝对有货 |
|||
INFINEON/英飞凌 |
2019+ |
SOT223 |
78550 |
原厂渠道 可含税出货 |
|||
INFINEON |
24+ |
SOT223 |
976000 |
郑重承诺只做原装进口现货 |
|||
NEXPERIA/安世 |
24+ |
SOT-223 |
9600 |
原装现货,优势供应,支持实单! |
BSP32规格书下载地址
BSP32参数引脚图相关
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- BSJ79
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- BSJ36
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- BSJ30
- BSC52
- BS9-02...06A
- BS8-8-01B...07B
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2019-11-5
DdatasheetPDF页码索引
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