丝印代码：BSP322P；P-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

20V-250V P-Channel Power MOSFET

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

SIPMOS Small-Signal-Transistor

文件：281.32 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：281.32 Kbytes Page：9 Pages

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 1600 V Mean forward current 740 A Surge current 11 kA

Silicon NPN Transistor RF Power Output

Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: ● Output Powe

0.3 inch ( 7.62 mm ) DUAL DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVD-322/323 is 0.3 inch ( 7.62 mm ) height dual digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. High efficirncy red display has red face and red segment. Bringht red ,green, yellen and red orange displays have black face and white s

Precision Timers

文件：281.35 Kbytes Page：14 Pages

2.0 mm Series

文件：31.43 Kbytes Page：1 Pages