P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

FEATURES · Low RDS(on) · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers.

P-channel enhancement mode vertical D-MOS transistor

P-channel vertical D-MOS intermediate level FET

2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacitance

1.75 mm X 7.0 mm Series

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Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon planar type

文件：41.87 Kbytes Page：2 Pages