SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = -0.8 -2.0 V

P-Channel SIPMOS Small-Signal Transistor

采用 SOT223 封装的工业级 P 沟道功率 MOSFET，降低中低功率应用的设计复杂性

Industrial grade P-channel power MOSFET in SOT223 package, reducing design complexity in medium and low power applications • Low on-resistance\n• 100% avalanche tested\n• Logic level\n• Pb-free lead plating; RoHS compliant\n• Qualified for industrial applications\n\n优势:\n• Easy interface to MCU\n• Improved efficiency at low loads\n• Fast switching\n• Avalanche ruggedness\n• Best-in-class quality and reliability\n ;

20V-250V P-Channel Power MOSFET

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated)

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SIPMOS Small-Signal-Transistor

文件：600.79 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：600.79 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：600.79 Kbytes Page：9 Pages

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

Silicon NPN Transistor Audio/Video Amplifier

Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE