丝印代码：MJE171；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Power Audio Amplifier Low Current, High Speed Switching Applications

丝印代码：MJE171；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Power Audio Amplifier Low Current, High Speed Switching Applications

PNP General Purpose Transistor

FEATURES ● Low frequency amplifier ● Low current ● High speed switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE180/181/182 APPLICATIONS • For low power audio amplifier and low current high speed switching applications

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE180/181/182 APPLICATIONS • For low power audio amplifier and low current high speed switching applications

Low Power Audio Amplifier Low Current, High Speed Switching Applications

PNP Epitaxial Silicon Transistor Low Power Audio Amplifier Low Current, High Speed Switching Applications

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

PNP PLASTIC POWER TRANSISTORS

MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS

SILICON COMPLEMENTRY POWER TRANSISTOR

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件：83.18 Kbytes Page：6 Pages

Silicon PNP Power Transistors

文件：104.44 Kbytes Page：3 Pages

TO-126 Plastic-Encapsulate Transistors

文件：687.76 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 60V 3A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor

Medium Power Transistor

晶体管

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件：83.18 Kbytes Page：6 Pages

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件：83.18 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 60V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Transistor Audio/Video Amplifier

Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE