N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-spe

N-Channel 200 V (D-S) MOSFET

FEATURES • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements

N-channel enhancement mode vertical D-MOS transistor

FEATURES · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V = 10A @Vos = 10v. B Roson $1350 @Vos= 10V 507-223 package. |

1 1/16

FEATURES • Gangable up to 6 sections • Extra taps on request • Bushing or servo mount types available • Ohmic value range: 5  up to 100 k • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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