丝印代码：TIP122；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

NPN Transistor Bare Die

Features Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

NPN Transistor Bare Die

Features Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage - Vceo(sus) = 60V (minimum) - TIP120, TIP125 80V (minimum) - TIP121, TIP126 100V (minimum) - TIP122, TIP127 • Collector-emitter saturation voltage - Vce(sat) = 2V (max

5.0 A，100 V，NPN 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices. • High DC Current Gain -hFE = 2500 (typ) @ IC = 4.0 Adc\n• Collector-Emitter Sustaining Voltage @ 100 mAVCEO(sus) = 60 Vdc (Min)TIP120, TIP125 VCEO(sus) = 80 Vdc (Min)TIP121, TIP126VCEO(sus) = 100 Vdc (Min)TIP122, TIP127\n• Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc(Max) @ IC= 3.0 Ad;

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Power Darlingtons for Linear and Switching Applications

TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. • High Collector Breakdown Voltage : VCEO=100V(Min.)

Medium Power Linear Switching Applications

Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127

NPN EPITAXIAL TRANSISTOR

DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

Darlington Transistors

[SGS] POWER DARLINGTONS The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 res

Darlington Power Transistors (NPN)

Features •Designed for general-purpose amplifier and low speed switching applications •RoHS Compliant

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

BASE NPN / PNP

EPITAXIAL BASE NPN / PNP POWER DARLINGTONS

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

NPN Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Darlington configuration in Jedec TO-220 package • The complementary PNP types are the TIP127 respectively. • Epoxy me

PNP/NPN Silicon Power Transistor

FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.The complementary PNP types are TIP127 respectively.

Silicon Power darlington Complementary transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR TIP120, TIP125 series types are Complementary Silicon Power Darlington Transistors designed for low speed switching and amplifier applications.

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

Darlington TRANSISTOR (NPN)

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Collec

NPN Epitaxial Darlington Transistor

Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127

ThinkiSemi mature NPN Epitaxial Darlington Transistor

Features ※ Complementary to TIP125/TIP126/TIP127 ※ Switching Times with Inductive Loads ※ Saturation Voltages ※ Leakage Currents ※ Fast Turn–Off Times Application ※ Medium Power Linear Switching Applications ※ AC and DC Motor Controls ※ Inverters,Solenoid and Relay Drivers Mechanical Dat

Plastic Medium-Power Complementary Silicon Transistors

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 100V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Darlington Power Transistors

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NPN SILICON POWER DARLINGTONS

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Silicon NPN transistor in a TO-220 Plastic Package.

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TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

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Plastic Medium-Power Complementary Silicon Transistors

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Si-Epitaxial Planar Darlington Power Transistors

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Complementary power Darlington transistors

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NPN Silicon Transistors

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TO-220 - Power Transistors and Darlingtons

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Plastic-Encapsulated Transistors

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Plastic Medium-Power Complementary Silicon Transistors

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封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor 三极管

达林顿管

Engine ignition

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NPN SILICON POWER DARLINGTONS

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Darlington TRANSISTOR (NPN)

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NPN SILICON POWER DARLINGTONS

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SILICON DARLINGTON POWER TRANSISTORS

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Darlington TRANSISTOR (NPN)

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NPN Transistor Bare Die

Features Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

NPN Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Darlington configuration in Jedec TO-220 package • The complementary PNP types are the TIP127 respectively. • Epoxy me

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features Complement to TIP127F. Applications Medium power linear switching applications.

DARLINGTON TRANSISTOR (NPN)

TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

Darlington TRANSISTOR (NPN)

TIP120F,121F,122F Darlington TRANSISTOR (NPN) TIP125F,126F,127F Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary silicon transistors

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp