位置：首页 > IC中文资料 > BSH205G2RMOS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
20 V, P-channel Trench MOSFET General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced | NEXPERIA 安世 |   | ||
20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET | NEXPERIA 安世 | | ||
P-Channel Mosfet PWM applications Load switch Power management | TECHPUBLIC 台舟电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
107000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
BSI |
24+ |
TSOP |
6618 |
公司现货库存,支持实单 |
|||
恩XP |
25+ |
SOT23 |
3000 |
原装正品,假一罚十! |
|||
恩XP |
24+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEXPERIA/安世 |
24+ |
SOT23 |
98000 |
原装现货假一罚十 |
|||
恩XP |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
恩XP |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
恩XP |
15PB |
SOT23 |
6000 |
||||
NEXPERIA/安世 |
25+ |
SOT23 |
600000 |
NEXPERIA/安世全新特价BSH205G2R即刻询购立享优惠#长期有排单订 |
|||
NEXPERIA/安世 |
22+ |
SMD |
12245 |
现货,原厂原装假一罚十! |
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BSH205G2RMOS规格书下载地址
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BSH205G2RMOS数据表相关新闻
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DdatasheetPDF页码索引
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