General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Low threshold voltage

• Low on-state resistance

• Trench MOSFET technology

• Enhanced power dissipation capability of 890 mW

• AEC-Q101 qualified

Applications

• Relay driver

• High-speed line driver

• High-side loadswitch

• Switching circuits